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AP10C150MT A-POWER | Alldatasheet

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Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BV DSS 100V ▼ Good Thermal Performance RDS(ON) 150mΩ ▼ Fast Switching Performance ID 3 3.2A ▼ RoHS Compliant & Halogen-Free P-CH BV DSS -100V RDS(ON) 160mΩ Description ID 3 -3.2A Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 100 -100 V VGS Gate-Source Voltage +20 + 20 V ID@TA=25℃ Drain Current, VGS @ 10V3 3.2 -3.2 A ID@TA=70℃ 2.5 -2.5 A IDM Pulsed Drain Current1 10 -10 A PD@TA=25℃ Total Power Dissipation W TSTG Storage Temperature Range ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Parameter Rating Units N-channel P-channel Rthj-c 6 ℃/W Rthj-a 35 35 ℃/W AP10C150MT Halogen-Free Product 3.57 -55 to 150 -55 to 150 Drain Current, VGS @ 10V3 Maximum Thermal Resistance, Junction-ambient3 201707071 6Maximum Thermal Resistance, Junction-case AP10C150 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designe r with an extreme efficient device for use in a wide range of powe r applications. The PMPAK ® 5x6 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. G2 PMPAK® 5x6 S1 G1 S2 G2 D1 D1 D2 D2

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 100 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=2A - - 150 m Ω VGS=5V, ID=1A - - 250 m Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=2A - 10 - S IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge ID=2A - 11 17.6 nC Qgs Gate-Source Charge VDS=50V - 2 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 2 - nC td(on) Turn-on Delay Time VDS=50V - 7 - ns tr Rise Time ID=1A - 4 - ns td(off) Turn-off Delay Time RG=3.3Ω -1 6- ns tf Fall Time VGS=10V - 7 - ns Ciss Input Capacitance VGS=0V - 600 960 pF Coss Output Capacitance VDS=50V - 35 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 25 - pF Rg Gate Resistance f=1.0MHz - 1.8 3.6 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=2.9A, VGS=0V - - 1.3 V trr Reverse Recovery Time IS=2A, VGS=0V - 19 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 15 - nC AP10C150MT

Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -100 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-2A - - 160 mΩ VGS=-5V, ID=-1A - - 250 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-2A - 7.5 - S IDSS Drain-Source Leakage Current VDS=-80V, VGS=0V - - -25 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge ID=-2A - 32 51.2 nC Qgs Gate-Source Charge VDS=-50V - 5.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=-10V - 5 - nC td(on) Turn-on Delay Time VDS=-50V - 12 - ns tr Rise Time ID=-1A - 4 - ns td(off) Turn-off Delay Time RG=3.3Ω -4 6- ns tf Fall Time VGS=-10V - 17 - ns Ciss Input Capacitance VGS=0V - 1900 3040 pF Coss Output Capacitance VDS=-50V - 60 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 45 - pF Rg Gate Resistance f=1.0MHz - 6 12 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-2.9A, VGS=0V - - -1.3 V trr Reverse Recovery Time IS=-2A, VGS=0V - 25 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 33 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 85oC/W at steady state.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 7.0V 6.0V 5.0V V G = 4.0V 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150o C 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =2A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 102 106 110 114 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =1A T A =25 o C 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D =1mA 10V 7.0V 6.0V 5.0V V G = 4.0V

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Drain Current v.s. Ambient Temperature 0 4 8 12 16 20 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =2A V DS =5 0 V 200 400 600 800 1000 1200 1 21 41 61 81 101 121 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 100 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) 100us 1ms 10ms 100ms DC T A =25 o C Single Pulse 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.02 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 85℃/W t T 0.01 Operation in this area limited by RDS(ON) 0123456 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =10V 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) ID , Drain Current (A)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 012345 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A = 150o C -10V -7.0V -6.0V -5.0V V G = -4.0V 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -2A V G = -10 V -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 012345 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =2 5o C -10V -7.0V -6.0V -5.0V V G = -4.0V 110 114 118 122 126 130 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =-1A T A =25 o C 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D = -1mA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Drain Current v.s. Ambient Temperature 01 0 2 0 3 0 4 0 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -2A V DS = -50V 800 1600 2400 3200 1 21 41 61 81 101 121 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 100 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) -ID (A) 100us 1ms 10ms 100ms DC T A =25 o C Single Pulse 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.02 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 85℃/W t T 0.01 Operation in this area limited by RDS(ON) 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) -ID , Drain Current (A) 0123456 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A) T j =150 o C T j =25 o C V DS = -10V

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence Part Number 10C150 YWWSSS

Product Information

10C150 specifications and overview.

Summary

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Source title 10C150 Datasheet(PDF) - Advanced Power Electronics Corp.

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