04N60I

AP04N60I-HF A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 600V ▼ Fast Switching Characteristic RDS(ON) 2.35Ω ▼ Simple Drive Requirement ID 4 4A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Drain Current, VGS @ 10V4 A ID@TC=100℃ Drain Current, VGS @ 10V4 A IDM Pulsed Drain Current1 A PD@TC=25℃ Total Power Dissipation W EAS Single Pulse Avalanche Energy3 mJ IAR Avalanche Current A TSTG Storage Temperature Range ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3.4 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W Data & specifications subject to change without notice +30 36.8 Parameter Rating 600 2.2 AP04N60I-HF Halogen-Free Product 201501082 -55 to 150 -55 to 150 G D S G D S TO-220CFM(I) AP04N60 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designe r with an extreme efficient device for use in a wide range of powe r applications. The TO-220CFM package is widely preferred for all commercial- industrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 600 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=2A - - 2.35 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=10V, ID=2A - 3.4 - S IDSS Drain-Source Leakage Current VDS=480V, VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS=+30V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=1A - 19.5 31 nC Qgs Gate-Source Charge V DS=480V - 3.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 8.5 - nC td(on) Turn-on Delay Time2 VDD=300V - 21 - ns tr Rise Time I D=2A - 20 - ns td(off) Turn-off Delay Time R G=50Ω - 105 - ns tf Fall Time V GS=10V - 27 - ns Ciss Input Capacitance V GS=0V - 740 1200 pF Coss Output Capacitance V DS=25V - 70 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 10 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=2A, VGS=0V - - 1.5 V trr Reverse Recovery Time2 IS=2A, VGS=0V - 280 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 2.94 - µC Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse test 3.Starting T j=25oC , VDD=50V , L=1mH , RG=25Ω THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP04N60I-HF 4.Ensure that the junction temperature does not exceed TJmax..

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.8 0.9 1.1 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS 0 4 8 12 16 20 24 28 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 8.0V 7.0V 6.0V V G =5.0V 0 4 8 1 21 62 02 42 8 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 8.0V 7.0V 6.0V V G =5.0V -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized RDS(ON) I D =2A V G =10V V SD , Source-to-Drain Voltage (V) IS (A) T j = 25 o CT j = 150 o C 0.4 0.6 0.8 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0 4 8 12 16 20 24 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =1A V DS =480V 200 400 600 800 1000 1200 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge 0.01 0.1 100 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC

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