HBNP2227S6R CYSTEKEC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 6

Technical content

Features

  • Includes a PN2222A chip and PN2907A chip in a SOT-363R package.
  • Mounting possible with SOT-323 automatic mounting machines.
  • Transistor elements are independent, eliminating interference.
  • Mounting cost and area can be cut in half. Equivalent Circuit Outline Absolute Maximum Ratings (Ta=25°C) Limits Parameter Symbol TR1 (NPN) TR2 (PNP) Unit Collector-Base Voltage V CBO 75 -60 V Collector-Emitter Voltage V CEO 40 -60 V Emitter-Base Voltage V EBO 6 -5 V Collector Current I C 600 -600 mA Power Dissipation Pd 200(total) *1 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note: *1 150mW per element must not be exceeded. SOT-363R HBNP2227S6R

CYStech Electronics Corp. Spec. No. : C903S6R Issued Date : 2003.03.18 Revised Date : 2004.06.19 Page No. : 2/6 HBNP2227S6R CYStek Product Specification Characteristics (Ta=25°C)

  • TR1 (NPN) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 75 - - V I C=10A BVCEO 40 - - V I C=10mA BVEBO 6 - - V I E=10A ICBO - - 10 nA V CB=60V ICEX - - 10 nA V CE=60V,VEB=3V IEBO - - 100 nA V EB=3V *VCE(sat) - - 0.3 V I C=150mA, IB=15mA *VCE(sat) - - 1.0 V I C=500mA, IB=50mA *VBE(sat) - - 1.2 V I C=150mA, IB=15mA *VBE(sat) - - 2.0 V I C=500mA, IB=50mA hFE 35 - - - V CE=10V, IC=100A hFE 50 - - - V CE=10V, IC=1mA hFE 75 - - - V CE=10V, IC=10mA *hFE 100 - 300 - V CE=10V, IC=150mA *hFE 50 - - - V CE=1V, IC=150mA *hFE 40 - - - V CE=10V, IC=500mA fT 300 - - MHz V CE=20V, IC=20mA, f=100MHz Cob - - 8 pF V CB=10V, f=1MHz *Pulse Test: Pulse Width ≤380s, Duty Cycle≤2%
  • TR2 (PNP) Symbol Min. Typ. Max. Unit Test Conditions BVCBO -60 - - V I C=-10A BVCEO -60 - - V I C=-10mA BVEBO -5 - - V I E=-10A ICBO - - -10 nA V CB=-50V ICEX - - -50 nA V CE=-30V,VEB=-0.5V IEBO - - -100 nA V EB=-3V *VCE(sat) - - -0.4 V I C=-150mA, IB=-15mA *VCE(sat) - - -1.6 V I C=-500mA, IB=-50mA *VBE(sat) - - -1.3 V I C=-150mA, IB=-15mA *VBE(sat) - - -2.6 V I C=-500mA, IB=-50mA hFE 75 - - - V CE=-10V, IC=-100A hFE 100 - - - V CE=-10V, IC=-1mA hFE 100 - - - V CE=-10V, IC=-10mA *hFE 100 - 300 - V CE=-10V, IC=-150mA *hFE 50 - - - V CE=-10V, IC=-500mA fT 200 - - MHz V CE=-20V, IC=-50mA, f=100MHz Cob - - 8 pF V CB=-10V, f=1MHz *Pulse Test: Pulse Width ≤380s, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C903S6R Issued Date : 2003.03.18 Revised Date : 2004.06.19 Page No. : 3/6 HBNP2227S6R CYStek Product Specification Characteristic curves

  • TR1 (NPN) Current Gain vs Collector Current 100 1000 0.1 1 10 100 1000 Collector Current---IC(mA) Current Gain---HFE VCE=1V VCE=10V Saturation Voltage vs Collector Current 100 1000 0.1 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage-(mV) VCE(SAT)@IC=10IB Saturation Voltage vs Collector Current 100 1000 10000 0.1 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage-(mV) VBE(SAT)@IC=10IB Cutoff Frequency vs Collector Current 100 1000 1 10 100 Collector Current---IC(mA) Cutoff Frequency(MHz) VCE=20V

CYStech Electronics Corp. Spec. No. : C903S6R Issued Date : 2003.03.18 Revised Date : 2004.06.19 Page No. : 4/6 HBNP2227S6R CYStek Product Specification

  • TR2 (PNP) Current Gain vs Collector Current 100 1000 0.1 1 10 100 1000 Collector Current---IC(mA) Current Gain---HFE HFE@VCE=10V Saturation Voltage vs Collector Current 100 1000 0.1 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage-(mV) VCE(SAT)@IC=10IB Saturation Voltage & Collector Current 100 1000 10000 0.1 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage-(mV) VBE(SAT)@IC=10IB Cutoff Frequency vs Collector Current 100 1000 1 10 100 Collector Current---IC(mA) Cutoff Frequency(MHz) VCE=20V Power Derating Curves 100 150 200 250 0 50 100 150 200 Ambient Temperature---TA(℃) Power Dissipation---PD(mW) dual single

CYStech Electronics Corp. Spec. No. : C903S6R Issued Date : 2003.03.18 Revised Date : 2004.06.19 Page No. : 5/6 HBNP2227S6R CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C903S6R Issued Date : 2003.03.18 Revised Date : 2004.06.19 Page No. : 6/6 HBNP2227S6R CYStek Product Specification SOT-363R Dimension *:Typical H - 0.004 - 0.1 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material :

  • Lead : 42 Alloy ; solder plating
  • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. 6-Lead SOT-363R Plastic Surface Mounted Package CYStek Package Code: S6R Style: Pin 1. Emitter1 (E1) Pin 2. Base1 (B1) Pin 3. Collector2 (C2) Pin 4. Emitter2 (E2) Pin 5. Base2 (B2) Pin 6. Collector1 (C1) Marking: 27R