ZX5T852Z ZHAOXINGWEI | Alldatasheet

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Technical content

= 60V : R SAT = 30m ; I C = 5A

DESCRIPTION

generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.

FEATURES

Extremely low equivalent on-resistance; R SAT = 30mV at 6A 5 amps continuous current Up to 20 amps peak current Very low saturation voltages Excellent h FE characteristics up to 10 amps

APPLICATIONS

Emergency lighting circuits Motor driving (including DC fans) Solenoid, relay and actuator drivers DC-DC modules Backlight inverters Power switches MOSFET gate drivers 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 PINOUT TOP VIEW SOT89 SMD Type Transistors

PARAMETER SYMBOL V ALUE UNIT Junction to ambient (a) R /H9052JA 83 °C/W Junction to ambient (b) R /H9052JA 60 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Collector-base voltage BV CBO 150 V Collector-emitter voltage BV CEO 60 V Emitter-base voltage BV EBO Continuous collector current (a) I C 5 A Peak pulse current I CM 20 A Power dissipation at T A =25°C (a) Linear derating factor P D 1.5 W mW/°C Power dissipation at T A =25°C (b) Linear derating factor P D 2.1 16.8 W mW/°C Operating and storage temperature range T j stg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS SMD Type Transistors

PARAMETER SYMBOL MIN. TYP . MAX. UNIT C ONDITIONS Collector-base breakdown voltage BV CBO 150 190 V I C =100 /H9262A Collector-emitter breakdown voltage BV CER 150 190 V I C =1/H9262A, RB /H113491k/H9024 Collector-emitter breakdown voltage BV CEO 60 80 V I C =10mA* Emitter-base breakdown voltage BV EBO 78 . 1 V I E =100 /H9262A Collector cut-off current I CBO 0.5 nA /H9262A V CB =120V V CB =120V,T amb =100/H11034C Collector cut-off current I CER R /H113491k/H9024 0.5 nA /H9262A V CB =120V V CB =120V,T amb =100/H11034C Emitter cut-off current I EBO 10 nA V EB =6V Collector-emitter saturation voltage V CE(SAT) 170 125 230 mV mV mV mV mV I C =100mA, I B =5mA* I C =1A, I B =100mA* I C =1A, I B =50mA* I C =2A, I B =50mA* I C =6A, I B =300mA* Base-emitter saturation voltage V BE(SAT) 970 1100 mV I C =6A, I B =300mA* Base-emitter turn-on voltage V BE(ON) 910 1050 mV I C =6A, V CE =1V* Static forward current transfer ratio H FE 100 100 200 200 105 300 I C =10mA, V CE =1V* I C =2A, V CE =1V* I C =5A, V CE =1V* I C =10A, V CE =1V* Transition frequency f T 130 I C =100mA, V CE =10V f=50MHz Output capacitance C OBO 31 pF V CB =10V, f=1MHz* Switching times t ON t OFF 760 ns I C =1A, V CC =10V, I =100mA ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated) * Measured under pulsed conditions. Pulse width /H11349300/H9262s; duty cycle /H113492%. SMD Type Transistors SMD Type Transistors

Controlling dimensions are in millimeters. Approximate conversions are given in inches PAD LAYOUT DETAILS DIM Millimeters Inches DIM Millimeters Inches Min Max Min Max Min Max Min Max b1 - 0.53 - 0.021 E1 - 2.60 - 0.102 PACKAGE DIMENSIONS SMD Type Transistors