PRF949 ZHAOXINGWEI | Alldatasheet

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Technical content

/G01/G02 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA /G01 f T = 9 GHz F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO V Collector-emitter voltage V CES Collector-base voltage V CBO Emitter-base voltage V EBO 1.5 Collector current I C mA Base current I B Total power dissipation T S /G01 93°C P tot 250 mW Junction temperature T j 150 Ambient temperature T A -65 ... 150 Storage temperature T st g -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point R thJS /G03/G02 225 K/W T S is measured on the collector lead at the soldering point to the pcb 2For calculation of R thJA please refer to Application Note Thermal Resistance SMD Type Transistor MAM337 PINNING SOT416 (SC75) PIN DESCRIPTION 1b a s e 2 emitter 3 collector

Electrical Characteristics

min. typ. max. Characteristics Collector-emitter breakdown voltage I C = 1 mA, I B = 0 V (BR)CEO V Collector-emitter cutoff current V CE = 20 , V BE = 0 V I CES 100 µA Collector -base cutoff current V CB = 10 V, I E = 0 I CBO 100 nA Emitter-base cutoff current V EB = 1 V, I C = 0 I EBO 0.1 µA DC current gain- I C = 5 mA, V CE = 6 V h FE 100 140 200 SMD Type Transistor

min. typ. max. AC Characteristics Transition frequency I C = 15 mA, V CE = 6 V, f = 1 GHz f T GHz Collector-base capacitance V CB = 10 V, f = 1 MHz, V BE = v be = 0 C cb 0.3 pF Collector emitter capacitance V CE = 10 V, f = 1 MHz, V BE = v be = 0 C ce 0.2 Emitter-base capacitance V EB = 0.5 V, f = 1 MHz, V CB = v cb = 0 C eb 0.7 Noise figure I C = 5 mA, V CE = 6 V, Z S = Z Sopt f = 1 GHz I C = 3 mA, V CE = 8 V, Z S = Z Sopt f = 1.8 GHz F 1.5 2.5 dB Power gain I C = 10 mA, V CE = 8 V, Z S = Z Sopt Z L = Z Lopt , f = 900 MHz G ms Power gain, maximum available I C = 10 mA, V CE = 8 V, Z S = Z Sopt Z L = Z Lopt , f = 1.8 GHz G ma 15.5 dB Transducer gain I C = 15 mA, V CE = 6 V, Z S = Z L = 50 /G04 f = 1 GHz I C = 10 mA, V CE = 8 V, Z S = Z L = 50 /G04 f = 1.8 GHz 21e dB G ma = | S S | (k-(k²-1) G ms = | S S SMD Type Transistor

SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: BF = 120 IKF = 0.152 mA BR = 33.322 - IKR = 0.063 A RB = 20.766 /G01 RE = 0.101 - VJE = 0.568 V XTF = 0.00894 - PTF = 0 deg MJC = 0.334 - CJS = 0 fF NK = 0.5 - FC = 0.924 NF = 1.085 ISE = 1.86 pF NR = 1.095 - ISC = 3.68 pA IRB = 72.2 mA RC = 0.849 /G01 MJE = 0.456 - VTF = 0.198 V CJC = 459 fF XCJC = 0.217 - VJS = 0.75 V EG = 1.11 eV TNOM 300 K IS = 4.36 fA VAF = 30 V NE = 1.998 - VAR = 41.889 V NC = 1.569 - RBM = 0.823 /G01 CJE = 291 fF TF = 8.77 ps ITF = 1.336 mA VJC = 1.048 V TR = 1.39 ns MJS = All parameters are ready to use, no scalling is necessery. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: L = 0.556 nH L = 0.657 nH L = 0.381 nH C = 43 fF C = 123 fF C = 66 fF C = 10 fF C = 36 fF C = 47 fF EHA07524 Transistor C’ L C CChip E L C B L C C C C Valid up to 6GHz SMD Type Transistor