CSD25310Q2

CSD25310Q2 ZHAOXINGWEI | Alldatasheet

Document overview

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Technical content

Power Management Switch Applications

• Low ON-resistance: R DS(ON) = 43.0 mΩ (max) (@V GS = -1.5 V) R DS(ON) = 26.5 mΩ (max) (@V GS = -1.8 V) R DS(ON) = 19.0 mΩ (max) (@V GS = -2.5 V) R DS(ON) = 15.3 mΩ (max) (@V GS = -4.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage V DSS −20 V Gate-Source voltage V GSS ±8 V Drain current Pulse I DP (Note 1) −30 A P D (Note 2) 1 Power dissipation t ≦10s 2 W Channel temperature T ch 150 °C Storage temperature T stg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Note 1: The pulse width limited by max channel temperature. Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm Equivalent Ci rcuit(Top View) Pin Condition(Top View) Unit: mm Plastic Package Weight: 8.5 mg (typ.) Polarity marking (on the top) *Electrodes : on the bottom 13 2 5 46 1 3 2 5 4 6 Drain Source 1,2,5,6: Drain 3: Gate 4: Source CSD25310Q2 SMD Type MosFET SON 2 x 2 mm

Electrical Characteristics

(Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. Max Unit V (BR) DSS I D = -1 mA, V GS = 0 V -20 ⎯ ⎯ Drain-Source breakdown voltage V (BR) DSX I D = -1 mA, V GS V Drain cut-off current I DSS V DS = -20 V, V GS = 0 V ⎯ ⎯ -1 μA Gate leakage current I GSS V GS = ±8 V, V DS = 0 V ⎯ ⎯ ±1 μA Gate threshold voltage V th V DS = -3 V, I D Forward transfer admittance ⏐Y fs ⏐ V DS = -3 V, I D = -2.0 A (Note 3) 11 22 ⎯ S I D = -4.0 A, V GS I D = -4.0 A, V GS = -2.5 V (Note 3) ⎯ 14 19 I D = -4.0 A, V GS Drain–source ON-resistance R DS (ON) I D = -2.0 A, V GS = -1.5 V (Note 3) ⎯ 20 43 mΩ Input capacitance C iss ⎯ 2600 ⎯ Output capacitance C oss ⎯ 290 ⎯ Reverse transfer capacitance C rss V DS = -10 V, V GS = 0 V, f = 1 MHz ⎯ 280 ⎯ pF Total Gate Charge Q g ⎯ 29.9 ⎯ Gate-Source Charge Q gs1 ⎯ 3.0 ⎯ Gate-Drain Charge Q gd V DD = −10 V, I D = −10 A V GS = −4.5 V ⎯ 5.6 ⎯ nC Turn-on time t on ⎯ 45.2 ⎯ Switching time Turn-off time t off V DD = -10 V, I D = -2.0 A, V GS = 0 to -2.5 V, R G = 4.7 Ω ⎯ 201 ⎯ ns Drain-Source forward voltage V DSF I D = 4 A, V GS = 0 V (Note 3) ⎯ 0.70 1.1 V Note 3: Pulse test Note 4: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-source breakdo wn voltage is lowered in this mode Switching Time Test Circuit Precaution Let V th be the voltage applied between gate and s ource that causes the drain current (I D to be low (-1 mA for the CSD25310Q2). Then, for normal switching operation, V GS(on) must be higher than V th, and V GS(off) must be lower than V th. This relationship can be expressed as: V GS(off) < V th < V GS(on) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance R th (ch-a) and power dissipation P D vary depending on board material, board area, board thickness and pad area. When using this device, please take heat dissipation into consideration t on t off (b) V IN (c) V OUT 0 V −2.5 V V DD V DS (ON) t r t f 90% 90% 10% 10% (a) Test circuit V DD = −10 V R G = 4.7 Ω Duty V IN : t r , t f < 5 ns Common source Ta = 25°C −2.5 V IN OUT V DD 10 μs R G SMD Type MosFET

0 -2.0 -4.0 -6.0 R DS (ON) – V GS -8.0 − 25 °C 25 °C Ta = 100 °C ID = -2.0 A Common Source Pulse test 100 I D – V GS -100 -0.0001 -10 -0.01 -0.1 -0.001 -2.0 −25 °C Common Source VDS = -3 V Pulse test Ta = 100 °C 25 °C -0.5 -1.5 -1.0 R DS (ON) – Ta −50 0 50 150 100 -4.0 A / -1.8 V -4.0 A / -2.5 V -4.0 A / -4.5 V Drain–source voltage V DS (V) I D – V DS Drain current I D (A) -10 0 -0.1 -2.5 V R DS (ON) – V GS R DS (ON) – I D -1.5 V 0 -2.0 -4.0 -6.0 -8.0 − 25 °C 25 °C Ta = 100 °C ID = -4.0 A Common Source Pulse test 100 -8.00 -2.0 -4.0 -6.0 -1.5 V -2.5 V -1.8 V VGS =-4.5 V -10.0 Gate–source voltage V GS ( V ) Drain current I D (A) Gate–source voltage V GS ( V ) Drain–source ON-resistance R DS (ON) ( m Ω) Gate–source voltage V GS ( V ) Drain–source ON-resistance R DS (ON) ( m Ω) Drain current I D (A) Drain–source ON-resistance R DS (ON) ( m Ω) Ambient temperature Ta (°C) Drain–source ON-resistance R DS (ON) ( m Ω) Common Source Ta = 25°C Pulse test Common Source Pulse test Common Source Ta = 25 °C Pulse test -0.2 -0.3 ID = -2.0 A / VGS = -1.5 V -1.8 V VGS =-4.5 V SMD Type MosFET

| – I D 0.1 -100 100 -0.1 -1 -10 C – V DS 0 0 10 20 V th – Ta -0.8 −50 0 150 -0.2 -0.4 -0.6 -1.0 50 100 t – I D I DR – V DS 100 0.01 0.1 0.001 Common Source VGS = 0 V Pulse test G D S I DR 100 °C 25 °C −25 °C Common Source VDS = -3 V Ta = 25 °C Pulse test -0.01 Common Source VDS = -3 V ID = -1 mA 100 -0.1 -1 -10 -100 1000 10000 Crss Common Source Ta = 25 °C f = 1 MHz VGS = 0 V -0.01 1000 10000 -1 -10 100 tf -0.1 toff tr ton Ambient temperature Ta (°C) Gate threshold voltage V th (V) Drain current I D (A) Forward transfer admittance Y fs (S) Drain–source voltage V DS (V) Capacitance C (pF) Total Gate Charge Qg (nC) Gate–source voltage V GS ( V ) Dynamic Input Characteristic Drain current I D (A) Switching time t (ns) Drain–source voltage V DS (V) Drain reverse current I DR (A) Coss VDD = -10 V VDD = -16 V Common Source ID = -10.0 A Ta = 25 °C Common Source VDD = -10 V VGS = 0 to -2.5 V Ta = 25 °C RG = 4.7Ω Ciss 40 50 60 SMD Type MosFET

r th t w 0.001 0.01 0.1 1 10 100 1000 100 1000 Pulse width t w (s) Transient thermal impedance Rth (°C/W) a b Single pulse a. Mounted on F4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm b. Mounted on F4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 2.27 mm Ambient temperature Ta (°C) P D – Ta Power dissipation P D (mW) 1000 200 120 100 140 400 800 16080 60 40 20 0 -20 -40 a 600 b 1200 1400 a: Mounted on FR4 board (25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm b: Mounted on FR4 board (25.4mm × 25.4mm × 1.6mm , Cu Pad : 2.27mm SMD Type MosFET