ZE016TG-M DOINGTER | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

www.doingter.cn — 1 — ZE016TG-M Description： This N-Channel MOSFET uses advanced SGT technology to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features： 1) VDS=60V,ID=30A,RDS(ON)<15mΩ@VGS=10V 2) Improved dv/dt capability 3) Fast switching 4) 100% EAS Guaranteed 5) Green Device Available. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-Continuous (TC=25℃) 30 A Continuous Drain Current-TC=100℃ 19 IDM ** Drain Current – Pulsed 120 A IS Single Pulse Avalanche Energy 30 mJ PD Power Dissipation (TC=25℃) 15 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 3.5 ℃/W RƟJA ** Thermal Resistance,Junction to Ambient 50 G D D D D S S A ll data sheet.com

www.doingter.cn — 2 — ZE016TG-M Package Marking and Ordering Information： Part NO. Marking Package ZE016TG-M E016T M DFN3*3-8 Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 60 --- --- V IDSS Drain-Source Leakage Current VGS=0V, VDS=48V, --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.5 --- 2.5 V RDS(ON) a Drain-Source On Resistance VGS=10V,ID=12A --- 12 15 mΩ VGS=4.5V,ID=8A --- 20 26 Dynamic Characteristics Ciss Input Capacitance VDS=30V, VGS=0V, f=1MHz --- 757 --- pF Coss Output Capacitance --- 340 --- Crss Reverse Transfer Capacitance --- 28 --- Switching Characteristics td(on) Turn-On Delay Time VDD=30V , VGS=10V , RG=4.5Ω，RL=2.5Ω ID=12A, --- 6.2 --- ns tr Rise Time --- 23 --- ns td(off) Turn-Off Delay Time --- 13 --- ns tf Fall Time --- 17 --- ns Qg Total Gate Charge VDS=30V , VGS=10V , IDS=12A --- 15 --- nC Qgs Gate-Source Charge --- 3.6 --- nC Qgd Gate-Drain “Miller” Charge --- 3.6 --- nC Drain-Source Diode Characteristics VSD a Source-Drain Diode Forward Voltage2 VGS=0V , IS=12A --- --- 1.3 V trr Reverse Recovery Time VGS=0V,IS=12A , --- 31 --- nS b b A ll data sheet.com

www.doingter.cn — 3 — ZE016TG-M Qrr Reverse Recovery Charge di/dt=100A/µs, --- 11 --- Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) μC * Pulse width  300 s, duty cycle  2 % Mounted on Large Heat Sink * limited by bonding wire a : Pulse test ; pulse width  300 s, duty cycle  2% b : Guaranteed by design, not subject to production testing Power Capability Current Capability Pt ot - Pow er ( ID - D rain Current (A) Tmp – Mounting Point Temp. (° C) Tmp – Mounting Point Temp. (° C) Safe Operating Area Transient Thermal Impedance ID - D rain Current (A) N ormalized Effective Transient VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) 0 20 40 60 80 100 120 140 160 TC= o C ,VG= 10V .01 0.1 1 10 100 500 100 200 0us 0us s Rds(on) Limit TC= o C ms 0ms DC 0 20 40 60 80 100 120 140 160 180 TC= o C E-4 1E-3 0.01 0.1 1 10 100 E-3 0.01 0.1 M ounted on 1in pad RJC :3.5 o C S ingle Pulse D uty = 0.5 A ll data sheet.com

www.doingter.cn — 4 — ZE016TG-M Output Characteristics On Resistance ID - D rain Current (A) RDS (ON) - O n Resistance (mΩ) VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Normalized Threshold Voltage RDS (ON) - O n Resistance (mΩ) N ormalized Threshold Voltage VGS - Gate-Source Voltage (V) Tj - Junction Temperature (° C) 50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS= 250A 0 1 2 3 4 5 6 7 8 9 10 100 IDS= 12A 0 5 10 15 20 25 30 35 40 VGS= 4.5V VGS= 10V VGS= 5,6,7,8,9,10V A ll data sheet.com

www.doingter.cn — —5 Normalized On Resistance Diode Forward Current N ormalized On Resistance IS - S ource Current (A) Tj - Junction Temperature (° C) VSD - Source-Drain Voltage (V) Capacitance Gate Charge C - C apacitance (pF) VGS - G ate-S ource Voltage (V) VDS - Drain-Source Voltage (V) QG - Gate Charge (nC) 0 10 20 30 40 50 200 400 600 800 1000 1200 Fr equency=1MHz C rss C oss C iss 0 5 10 15 VDS= 30V ID = 12A 50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 RON@Tj= o C: 12m VGS = 10V IDS = 12A Tj= o C Tj= 150 o C A ll data sheet.com