SSG4942N DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This Dual N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=40V,ID=7A,RDS(ON)<32mΩ@VGS=4.5V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current 7 A Continuous Drain Current-TC=100℃ 3 Pulsed Drain Current1 20 EAS Single Pulse Avalanche Energy --- mJ PD Power Dissipation 1.56 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJL Maximum Junction-to-Lead --- ℃/W RƟJA Thermal Resistance,Junction to Ambient 80 D2S1 SSG4942N All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 40 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=40V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.2 1.6 2.5 V RDS(ON) Drain-Source On Resistance3 VGS=10V,ID=3A 11 28 32 mΩ GFS Forward Transconductance VDS=10V, ID=3A --- 6.5 --- S Dynamic Characteristics4 Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 420 800 pF Coss Output Capacitance --- 65 120 Crss Reverse Transfer Capacitance --- 40 80 Switching Characteristics4 td(on) Turn-On Delay Time2.3 VDS=20V, ID=1A RGEN=25Ω. VGS=4.5V, --- 3.2 6 ns tr Rise Time2.3 --- 8.6 16 ns td(off) Turn-Off Delay Time2.3 --- 18 36 ns tf Fall Time2.3 --- 6 12 ns Qg Total Gate Charge2.3 VGS=4.5V, VDS=20V, ID=3A --- 5.2 10 nC Qgs Gate-Source Charge 2.3 --- 1.2 2.4 nC Qgd Gate-Drain “Miller” Charge2.3 --- 2.5 5 nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage2 VGS=0V,IS=1A --- 0.7 1 V ls Maximum Body-Diode Continuous Current --- --- 5 A SSG4942N All d ata sheet.com
www.doingter.cn — 3 — Ism Pulsed Source Current2 --- --- 10 A Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) VG=VD=0V , Force Current 1. Repetitive Rating : Pulsed width limit ed by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Fig.1 Continuous Drain Current vs. T C Fig.3 Normalized V th vs. TJ TC , Case Temperature (℃) ID , Continuous Drain Current (A) Normalized On Resistance (m) Fig.2 Normalized RDSON vs. T J TJ , Junction Temperature (℃) Normalized Gate Threshold V oltage (V) VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform TJ , Junction Temperature (℃) SSG4942N All d ata sheet.com
www.doingter.cn — 4 — Normalized Thermal Response (RΘJA) Square Wave Pulse Duration (s) ID , Continuous Drain Current (A) VDS , Drain to Source V oltage (V) Fig.6 Maximum Safe Operation Area Fig.5 Normalized Transient Response Fig.8 EAS Waveform Fig.7 Switching Time Waveform SSG4942N 0086-0755-8278-9056 All d ata sheet.com