STD7NS20 DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=200V,ID=9A,RDS(ON)≤0.4Ω@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±30 V ID Continuous Drain Current-TC=25℃ 9 A Continuous Drain Current-TC=100℃ 5.7 Pulsed Drain Current --- EAS Single Pulse Avalanche Energy1 160 mJ PD Power Dissipation(TC=25℃) 38 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 2.27 ℃/W RƟJA Thermal Resistance,Junction to Ambient 110 D S G STD7NS20 All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 200 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=200V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±30V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 --- 4 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=5A --- --- 0.4 Ω Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 550 720 pF Coss Output Capacitance --- 85 110 Crss Reverse Transfer Capacitance --- 22 29 Switching Characteristics td(on) Turn-On Delay Time3,4 VDD=250V, ID=9A, RGEN=25Ω --- 11 25 ns tr Rise Time3,4 --- 70 140 ns td(off) Turn-Off Delay Time3,4 --- 60 120 ns tf Fall Time3,4 --- 65 130 ns Qg Total Gate Charge3,4 VGS=10V, VDS=400V, ID=9A --- 22 30 nC Qgs Gate-Source Charge 3,4 --- 4.0 --- nC Qgd Gate-Drain “Miller” Charge3,4 --- 11 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,ID=9A --- --- 1.5 V STD7NS20 All d ata sheet.com
www.doingter.cn — 3 — Notes: 1, L=3.0mH, IAS=9A, VDD=50V, RG=25Ω, Starting TJ =25°C 2, Repetitive Rating : Pulse width limited by maximum junction temperature 3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 4, Essentially Independent of Operating Temperature. Typical Characteristics： (TC=25℃ unless otherwise noted) STD7NS20 All d ata sheet.com
www.doingter.cn — 4 — STD7NS20 All d ata sheet.com
www.doingter.cn — 5 — STD7NS20 0086-0755-8278-9056 All d ata sheet.com