STD65N3LLH5 DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=30V,ID=100A,RDS(ON)<4.2mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃1 100 A Continuous Drain Current-TC=100℃1 59 Pulsed Drain Current2 360 EAS Single Pulse Avalanche Energy3 250 mJ PD Power Dissipation,TC=25℃4 90 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 2.5 ℃/W RƟJA Thermal Resistance,Junction to Ambient3 62.5 D S G STD65N3LLH5 All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 30 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=24V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 3 V RDS(ON) Drain-Source On Resistance2 VGS=10V,ID=40A --- 3.6 4.2 mΩ VGS=4.5V,ID=30A --- --- 7 GFS Forward Transconductance VDS=10V, ID=15A --- 28 --- S Dynamic Characteristics Ciss Input Capacitance VDS=15V, VGS=0V, f=1MHz --- 1950 2350 pF Coss Output Capacitance --- 320 --- Crss Reverse Transfer Capacitance --- 240 --- Switching Characteristics td(on) Turn-On Delay Time VDD=15V, ID=15A, VGS=10V,RGEN=3.3Ω --- 13 --- ns tr Rise Time --- 36 --- ns td(off) Turn-Off Delay Time --- 43 --- ns tf Fall Time --- 16 --- ns Qg Total Gate Charge VGS=10V, VDS=24V, ID=20A --- 42 84 nC Qgs Gate-Source Charge --- 3.9 --- nC Qgd Gate-Drain “Miller” Charge --- 14 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage2 VGS=0V,IS=30A --- --- 1.2 V STD65N3LLH5 All d ata sheet.com
www.doingter.cn — 3 — trr Reverse Recovery Time 16 --- Ns qrr Reverse Recovery Charge 5 --- nc Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) STD65N3LLH5 All d ata sheet.com
www.doingter.cn — 4 — STD65N3LLH5 0086-0755-8278-9056 All d ata sheet.com