UF540L-TA3-T DOINGTER | Alldatasheet
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--- www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=100V,ID=30A,RDS(ON)≤ @VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ 30 A Continuous Drain Current-TC=100℃ 12 Pulsed Drain Current 60 EAS Single Pulse Avalanche Energy5 250 mJ PD Power Dissipation 55 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 2.27 ℃/W RƟJA Thermal Resistance,Junction to Ambient D S G IDM Ω70m UF540L-TA3-T All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 100 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=100V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.2 1.8 2.8 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=5 A --- GFS Forward Transconductance --- --- S Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- pF Coss Output Capacitance --- 240 Crss Reverse Transfer Capacitance --- 180 Switching Characteristics td(on) Turn-On Delay Time VDD=30V, ID=2A, RGEN=15Ω --- 13.8 --- ns tr Rise Time --- 9.3 --- ns td(off) Turn-Off Delay Time --- 43.8 --- ns tf Fall Time --- 11.4 --- ns Qg Total Gate Charge VGS=10V, VDS=30V, ID=3A --- 31 nC Qgs Gate-Source Charge --- 6.4 --- nC Qgd Gate-Drain “Miller” Charge --- 9.4 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,Id=9 A --- --- 1.2 V (Note 3) VDS=50V,ID=9A 12 1350 (Note 4) (Note 4) VGS=10V,RG=2.5Ω (Note 3) --- --- AIS Diode Forward Current (Note 2) 30 Ωm56 70 UF540L-TA3-T All d ata sheet.com
www.doingter.cn — 5 — Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance r(t),Normalized Effective Transient Thermal Impedance UF540L-TA3-T 0086-0755-8278-9056 All d ata sheet.com