ZC010PG DOINGTER | Alldatasheet
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www.doingter .cn — 1 — ZC010PG Description： This P-Channel MOSFET uses advanced trench technology to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features： 1) VDS=-30V,ID=-50A,RDS(ON) 8.5mΩ@VGS=10V 2) Improved dv/dt capability 3) Fast switching 4) 100% EAS Guaranteed 5) Green Device Available. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain -Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current -Continuous (TC=25 ℃) -50 A Continuous Drain Current -TC=100℃ -32 IDM Drain Current – Pulsed 1 -200 A EAS Single Pulse Avalanche Energy 2 --- mJ PD Power Dissipation (TC=25 ℃) W Power Dissipation – Derate above 25 ℃ 0.47 W/℃ TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 Thermal Characteristics S S G D D D D S D G Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 62 ℃/W RƟJA Thermal Resistance,Junction to Ambient 2.1 A ll data sheet.com
www.doingter .cn — 2 — ZC010PG Package Marking and Ordering Information： Part NO. Marking Package ZC010PG C010P DNF3*3-8 Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain -Sourtce Breakdown Voltage VGS=0V,ID=250μA -30 --- --- V IDSS Drain -Source Leakage Current VGS=0V, VDS=-30V, TJ=25℃ --- --- μA VGS=0V, VDS=-24V, TJ=125℃ -10 μA IGSS Gate -Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA -1.2 -1.6 -2.5 V RDS(ON) Drain -Source On Resistance VGS=10V,ID=10A --- 7.1 8.5 mΩ VGS=4.5V,ID=8A --- 11.5 GFS Forward Transconductance VDS=-10V, ID=10A --- --- S Dynamic Characteristics Ciss Input Capacitance VDS=-15V, VGS=0V, f=1MHz --- 3300 4800 pF Coss Output Capacitance --- 410 700 Crss Reverse Transfer Capacitance --- 280 500 Switching Characteristics td(on) Turn-On Delay Time 2.3 VDD=-15V , VGS=-10V , RG=6,ID=1A --- 24.5 ns tr Ris e Time2.3 --- 10.5 ns td(off) Turn-Off Delay Time2.3 --- 156.8 230 ns tf Fall Time 2.3 --- ns Qg Total Gate Charge 2.3 VDS=-15V , VGS=4.5V , ID=10A --- 35 56 nC Qgs Gate -Source Charge2.3 --- 10.8 16 nC Qgd Gate -Drain “Miller”Charge2.3 --- 10.6 16 nC A ll data sheet.com
www.doingter .cn — 3 — ZC010PG Drain-Source Diode Characteristics VSD Source -Drain Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- V IS Continuous Source Current VG=V0=0V,Fore Current --- --- -50 A ISM Puls ed Source Current --- --- -100 A Notes Typical Characteristics： (TC=25℃ unless otherwise noted) Fig.1 Continuous Drain Current vs. T Fig.2 Normalized RDSON vs. T Fig.3 Normalized Vth vs. T Fig.4 Gate Charge Waveform A ll data sheet.com
www.doingter .cn — 4 — ZC010PG Fig.5 Normalized Transient Im pedance Fig.6 Maximum Safe Operation Area Fig.7 Switching Time Waveform Fig. 8 Gate Charge Waveform A ll data sheet.com