ZC010NG DOINGTER | Alldatasheet
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Continuous ( www.doingter.cn — 1 — ZC010NG Description： This N-Channel MOSFET uses advanced trench technology to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features： 1) VDS=30V,ID=40 ,RDS(ON)=10 @VGS=10V 2) Improved dv/dt capability 3) Fast switching 4) 100% EAS Guaranteed 5) Green Device Available. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current Continuous ( ) 1 40 A Continuous Drain Current- 24 IDM Drain Current – Pulsed2 75 A EAS Single Pulse Avalanche Energy3 24.2 mJ IAS 22 W PD Power Dissipation (T =25℃ ) 4 1.67 W/℃ TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case1 4.8 ℃/W G D D D D S S Avalanche Current mΩ TC=25℃ C A ) 1TC=100℃( A ll data sheet.com
www.doingter.cn — 2 — ZC010NG RƟJA Thermal Resistance,Junction to Ambient1 75 Package Marking and Ordering Information： Part NO. Marking Package ZC010NG C010N DFN3*3-8 Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 30 --- --- V IDSS Drain-Source Leakage Current VGS=0V, VDS=30V, TJ=25℃ --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 --- 2.5 V RDS(ON) Drain-Source On Resistance2 VGS=10V,ID= --- 8.5 10 mΩ VGS=4.5V,ID= --- 11 17 GFS Forward Transconductance VDS=5V, ID=15 --- 24.4 --- S Dynamic Characteristics Ciss Input Capacitance VDS=1V, VGS=0V, f=1MHz --- 896 --- pF Coss Output Capacitance --- 126 --- Crss Reverse Transfer Capacitance --- 108 --- Switching Characteristics td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=1.5Ω，ID=20A --- 6.4 --- ns tr Rise Time --- 39 --- ns td(off) Turn-Off Delay Time --- 21 --- ns tf Fall Time --- 4.7 --- ns Qg Total Gate Charge VDS=15V , VGS=4.5V , ID=12 --- 9.82 --- nC Qgs Gate-Source Charge --- 2.24 --- nC Qgd Gate-Drain “Miller” Charge --- 5.54 --- nC ℃/W 15A 10A A A ll data sheet.com
www.doingter.cn — 3 — ZC010NG Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1 V IS Reverse Recovery Time1.5 --- 37 --- nS ISM Reverse Recovery Charge2.5 --- 75 --- nC Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) VG=VD=0V , Force Current 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=22A 4.The power dissipation is limited by 175℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 0 0 .25 0 .5 0 .75 1 VDS , Drain-to-Source Voltage (V) ID Drain Current (A) VGS= 10V VGS= VGS= VGS= 4.5V VGS= 2 4 6 8 10 VGS (V) RD SON (mΩ) ID= 12A 0 0 .3 0 .6 0 .9 1 VSD , Source-to-Drain Voltage (V) IS S ource Current(A) TJ= 150℃ TJ= 25℃ 0 7 .5 15 2 2.5 30 QG , Total Gate Charge (nC) VGS Gate to Source Voltage (V) ID= 12A Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Forward Characteristics of Reverse Fig.4 Gate-charge Characteristics A ll data sheet.com
www.doingter.cn — 4 — ZC010NG 50 25 100 175 TJ ,Junction Temperature ( ℃) N ormalized VG S(th) 50 0 50 100 150 TJ , Junction Temperature (℃) N ormalized On Resistance Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 100 1000 10000 1 5 9 13 17 21 25VDS Drain to Source Voltage(V) C apacitance (pF) F =1.0MHz C iss C oss C rss .01 .10 .00 0.00 00.00 .1 1 10 100 VDS (V) ID ( 10us 100us 0ms 00ms DC TC= 25℃ Si ngle Pulse ms .001 .01 .00001 0 .0001 0 .001 0 .01 0 .1 1 10 t , Pulse Width (s) N ormalized Thermal Response (Rθ JC) PDM D = TON/T TJp eak = TC + PDM x Rθ JC TON T .02 .01 .05 D UTY=0.5 S INGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance A ll data sheet.com