ZC005NG DOINGTER | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
www.doingter.cn — 1 — ZC005NG Description： This N-Channel MOSFET uses advanced trench technology to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features： 1) VDS=30V,ID=90A,RDS(ON) 4.2mΩ@VGS=10V 2) Improved dv/dt capability 3) Fast switching 4) 100% EAS Guaranteed 5) Green Device Available. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-Continuous (TC=25℃) 90 A Continuous Drain Current-TC=100℃ 53 IDM Drain Current – Pulsed1 330 A EAS Single Pulse Avalanche Energy 240 mJ PD Power Dissipation (TC=25℃) 45 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 2.5 ℃/W RƟJA Thermal Resistance,Junction to Ambient3 62.5 G D D D D S S (S) A ll data sheet.com
www.doingter.cn — 2 — ZC005NG Package Marking and Ordering Information： Part NO. Marking Package ZC005NG C005N DFN3*3 Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 30 --- --- V IDSS Drain-Source Leakage Current VGS=0V, VDS=24V, TJ=25℃ --- --- 10 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 1.5 3 V RDS(ON) Drain-Source On Resistance2 VGS=10V,ID=30A --- 3.6 4.2 mΩ VGS=4.5V,ID=20A --- --- 7 GFS Forward Transconductance VDS=5V, ID=6A --- 13 --- S Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 1950 2350 pF Coss Output Capacitance --- 320 --- Crss Reverse Transfer Capacitance --- 240 --- Rg f=1MHz --- 0.9 --- Ω Switching Characteristics td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=3.3Ω,ID=15A --- 13 ns tr Rise Time --- 36 ns td(off) Turn-Off Delay Time --- 43 ns tf Fall Time --- 16 ns Qg Total Gate Charge VDS=24V , VGS=10V , ID=20A --- 42 nC Qgs Gate-Source Charge --- 3.9 nC Qgd Gate-Drain “Miller” Charge --- 14 nC Drain-Source Diode Characteristics Gate Resistance --- --- --- --- --- --- --- A ll data sheet.com
www.doingter.cn — 3 — ZC005NG VSD Source-Drain Diode Forward Voltage2 VGS=0V , IS=30A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time VGS=0V,IS=10A , di/dt=100A 16 nS Qrr Reverse Recovery Charge 5 nC Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) --- --- --- --- A ll data sheet.com
www.doingter.cn — 4 — ZC005NG A ll data sheet.com