XP152A12COMR HTSEMI | Alldatasheet

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Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions SG D Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) XP152A12COMR 130m Ω 190m Parameter Symbol Limit Unit Drain-Source Voltage V DS -20 Gate-Source Voltage V GS V Continuous Drain Current I D -2.2 Pulsed Drain Current I DM A TA = 25 o Maximum Power Dissipation TA = 75 o C P D 0.8 W Operating Junction and Storage Temperature Range T J , T stg -55 to 150 o C Junction-to-Ambient Thermal Resistance (PCB mounted) 166 o C/W 1.25 Junction-to-Ambient Thermal Resistance (PCB mounted) 100 R R thJA Notes Pulse width limited by maximum junction temperature. Surface Mounted on FR4 Board, t /C0118 5 sec. Surface Mounted on FR4 Board. RDS(ON), Vgs@-2.5V, Ids@-2.0A Millimeter A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 - E 0 0.10 L 0.85 1.15 F 0.45 0.55 M 0° 10° Millimeter 20V P-Channel Enhancement Mode MOSFET Date:2011/05 www.htsemi.comsemiconductor JinYu

ELECTRICAL CHARACTERISTICS

Drain-Source Breakdown Voltage BV DSS V GS = 0V, I D = -250uA -20 V Drain-Source On-State Resistance R DS(on) V GS = -4.5V, I D = -2.8A 105 130 V GS = -2.5V, I D = -2.0A 145 190 mΩ Gate Threshold Voltage V GS(th) V DS GS , I D = -250uA -0.45 V Zero Gate Voltage Drain Current 0 V DS = -20V, V GS = 0V -1 Gate Body Leakage I GSS V GS = ± 8V, V DS = 0V ±100 nA Forward Transconductance g fs V DS = -5V, I D = -2.8A 6.5 S Dynamic Total Gate Charge Q g 5.8 10 Gate-Source Charge Q gs 0.85 Gate-Drain Charge Q gd V DS = -6V, I D -2.8A V GS = -4.5V 1.7 nC Turn-On Delay Time t d(on) 13 25 Turn-On Rise Time t r 36 60 Turn-Off Delay Time t d(off) 42 70 Turn-Off Fall Time t f V DD = -6V, RL=6Ω I D -1.A, V GEN = -4.5V R G = 6 34 60 ns Input Capacitance C iss 415 Output Capacitance C oss 223 Reverse Transfer Capacitance C rss V DS = -6V, V GS = 0V f = 1.0 MHz pF Source-Drain Diode Max. Diode Forward Current I S Diode Forward Voltage V SD I S = -1.6A, V GS = 0V -1.2 V Pulse test: pulse width <= 300us, duty cycle<= 2% I DSS DS = -20V, V GS = 0V TJ=55 o C V -10 uA Ω -0.8 /C0094 /C0094 Symbol Min. Max. Typ. Unit -1.6 A XP152A12COMR 20V P-Channel Enhancement Mode MOSFET Date:2011/05 www.htsemi.comsemiconductor JinYu

/C0095 On-Resistance vs. Drain Current Output Characteristics Transfer Characteristics V DS - Drain-to-Source Voltage (V) - Drain Current (A)I D V GS - Gate-to-Source Voltage (V) - Drain Current (A)I D 012345 T C = -55 /C0095C 125/C0095C 0, 0.5, 1 V 2.5 V V GS 1.5 V 2 V 200 400 600 800 1000 0369 1 2 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 02468 0.0 0.1 0.2 0.3 0.4 0.5 0.6 02468 1 0 Gate Charge - Gate-to-Source Voltage (V) Q g - Total Gate Charge (nC) V DS - Drain-to-Source Voltage (V) C - Capacitance (pF) V GS C rss C oss C iss V DS = 6 V I D = 2.8 A - On-Resistance (rDS(on) /C0087) I D - Drain Current (A) Capacitance On-Resistance vs. Junction Temperature V GS = 4.5 V I D = 2.8 A T J - Junction Temperature (/C0095C) (Normalized) - On-Resistance (rDS(on) /C0087) V GS = 2.5 V V GS = 4.5 V 25/C0095C XP152A12COMR 20V P-Channel Enhancement Mode MOSFET Date:2011/05 www.htsemi.comsemiconductor JinYu

0.01 0.10 1.00 10.00 Power (W) -0.2 -0.1 0.0 0.1 0.2 0.3 0.4 -50 0 50 100 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 02468 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 0.1 0.01 Normalized Effective Transient Thermal Impedance - On-Resistance (rDS(on) /C0087) V SD - Source-to-Drain Voltage (V) V GS - Gate-to-Source Voltage (V) - Source Current (A)I S T J - Temperature (/C0095C) Time (sec) Variance (V)VGS(th) 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 I D = 2.8 A I D = 250 /C0109A T C = 25/C0095C Single Pulse T J = 25/C0095C T J = 150/C0095C XP152A12COMR 20V P-Channel Enhancement Mode MOSFET Date:2011/05 www.htsemi.comsemiconductor JinYu