PT8205A HTSEMI | Alldatasheet

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Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS Gate-Source Voltage V GS ± 12 V Continuous Drain Current I D Pulsed Drain Current I DM A TA = 25 o C 1.6 Maximum Power Dissipation TA = 75 o C P D W Operating Junction and Storage Temperature Range T J , T stg -55 to 150 o C Junction-to-Ambient Thermal Resistance (PCB mounted) R θJA o C/W Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 1.20 MAX. E1 A2 0.80 1.05 0.45 b C 0.90 0.20 D 2.90 3.00 . A1 0.05 0.15 0.19 0.30 E 6.40BSC 4.30 4.50 e 0.65BSC 0° 10° θ L 0.75 TSSOP-8 Notes Pulse width limited by maximum junction temperature. Surface Mounted on FR4 Board, t /C0118 5 sec. RDS(ON), Vgs@ 2.5V, Ids@ 5.2A = 38mΩ RDS(ON), Vgs@ 4.5V, Ids@ 6A = 28mΩ 20V Dual N-Channel Enhancement Mode MOSFET PT8205A Date:2011/05 www.htsemi.comsemiconductor JinYu

ELECTRICAL CHARACTERISTICS

Drain-Source Breakdown Voltage BV DSS V GS = 0V, I D = 250uA 20 - - V Drain-Source On-State Resistance R DS(on) V GS = 2.5V, I D = 5.2A 30.0 38 Drain-Source On-State Resistance R DS(on) V GS = 4.5V, I D = 6A 21.0 28 mΩ Gate Threshold Voltage V GS(th) V DS GS , I D = 250uA 0.6 1.5 V Zero Gate Voltage Drain Current 0 I DSS V DS = 20V, V GS = 0V 1 uA Gate Body Leakage I GSS = ± 8V, V DS = 0V ±100 nA Forward Transconductance g fs V DS = 5V, I D =6A 22 S Dynamic Total Gate Charge Q g Gate-Source Charge Q gs 1.1 Gate-Drain Charge Q gd V DS = 10V, I D = 6A V GS = 4.5V 2.1 nC Turn-On Delay Time t d(on) 10 20 Turn-On Rise Time t r 11 25 Turn-Off Delay Time t d(off) 35 70 Turn-Off Fall Time t f V DD = 10V, R G = 6Ω I D = 1A, V GS = 4.5V 30 60 ns Input Capacitance C iss 600 Output Capacitance C oss 330 Reverse Transfer Capacitance C rss V DS = 8V, V GS = 0V f = 1.0 MHz 140 pF Source-Drain Diode Max. Diode Forward Current I S 1.7 A Diode Forward Voltage V SD I S = 1.7A, V GS = 0V 1.2 V Pulse test: pulse width <= 300us, duty cycle<= 2% Symbol Min. UnitMax.Typ. 0.72 GS V Date:2011/05 www.htsemi.comsemiconductor JinYu 20V Dual N-Channel Enhancement Mode MOSFET PT8205A

Date:2011/05 www.htsemi.comsemiconductor JinYu 20V Dual N-Channel Enhancement Mode MOSFET PT8205A