S9015W HTSEMI | Alldatasheet
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Technical content
TRANSISTOR(PNP)
FEATURES
Small Surface Mount Package High DC Current Gain MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -100 mA PC Collector Power Dissipation 200 mW RΘJA Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-100µA, IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -100 nA Emitter cut-off current IEBO VEB=-5V, IC=0 -100 nA DC current gain hFE VCE=-5V, IC=-1mA 200 1000 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100mA, IB=-10mA -1 V Base-emitter voltage VBE VCE=-5V, IC=-1mA -0.6 -0.75 V Transition frequency fT VCE=-5V,IC=-10mA , f=30MHz 150 MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 7 pF CLASSIFICATION OF hFE RANK L H RANGE 200–450 450–1000 MARKING M6 SOT–323 1. BASE 2. EMITTER 3. COLLECTOR S901 5W Date:2011/05 www.htsemi.comsemiconductor JinYu