XP151A13COMR HTSEMI | Alldatasheet

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Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions SG D Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) XP151A13COMR Ω 115m Parameter Symbol Limit Unit Drain-Source Voltage V DS Gate-Source Voltage V GS V Continuous Drain Current I D 2.3 Pulsed Drain Current I DM A TA = 25 o Maximum Power Dissipation TA = 75 o C P D 0.8 W Operating Junction and Storage Temperature Range T J , T stg -55 to 150 o C Junction-to-Ambient Thermal Resistance (PCB mounted) 166 o C/W 1.25 Junction-to-Ambient Thermal Resistance (PCB mounted) 100 R R thJA Notes Pulse width limited by maximum junction temperature. Surface Mounted on FR4 Board, t /C0118 5 sec. Surface Mounted on FR4 Board. 3.6A Millimeter A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 - E 0 0.10 L 0.85 1.15 F 0.45 0.55 M 0° 10° Millimeter 85m 20V N-Channel Enhancement Mode MOSFET Date:2011/05 www.htsemi.comsemiconductor JinYu

ELECTRICAL CHARACTERISTICS

Drain-Source Breakdown Voltage BV DSS V GS = 0V, I D = 10uA 20 V Drain-Source On-State Resistance V GS = 4.5V, I D = 3.6A 70 R DS(on) V GS = 2.5V, I D = 3.1A mΩ Gate Threshold Voltage V GS(th) V DS GS , I D = 250uA 0.6 V Zero Gate Voltage Drain Current 0 V DS = 16V, V GS = 0V 1 Gate Body Leakage I GSS V GS = ± 8V, V DS = 0V ±100 nA Forward Transconductance g fs V DS = 5V, I D = 3.6A 10 S Dynamic Total Gate Charge Q g 5.4 10 Gate-Source Charge Q gs 0.65 Gate-Drain Charge Q gd V DS = 10V, I D = 3.6A V GS = 4.5V 1.6 nC Turn-On Delay Time t d(on) 12 25 Turn-On Rise Time t r 36 60 Turn-Off Delay Time t d(off) 34 60 Turn-Off Fall Time t f V DD = 10V, RL=5.5Ω I D 3.6A,V GEN = 4.5V R G = 6 10 25 ns Input Capacitance C iss 340 Output Capacitance C oss 115 Reverse Transfer Capacitance C rss V DS = 10V, V GS = 0V f = 1.0 MHz pF Source-Drain Diode Max. Diode Forward Current I S Diode Forward Voltage V SD I S = 1.6A, V GS = 0V Pulse test: pulse width <= 300us, duty cycle<= 2% I DSS DS = 20V, V GS = 0V TJ=55 o C V 10 uA Ω 85 115 /C0094 Symbol Min. Typ. Miax. Unit 1.6 A 1.2 V XP151A13COMR 20V N-Channel Enhancement Mode MOSFET Date:2011/05 www.htsemi.comsemiconductor JinYu

On-Resistance vs. Drain Current Output Characteristics Transfer Characteristics V DS – Drain-to-Source Voltage (V) – Drain Current (A)ID V GS – Gate-to-Source Voltage (V) – Drain Current (A)ID 012345 T C = 125C –55C 0, 0.5, 1 V V GS = 5 thru 2.5 V 1.5 V 2 V 200 400 600 800 1000 0 4 8 12 16 20 0.6 0.8 1.0 1.2 1.4 1.6 1.8 –50 0 50 100 150 01234567 0.03 0.06 0.09 0.12 0.15 02468 1 0 Gate Charge – Gate-to-Source Voltage (V) Q g – Total Gate Charge (nC) V DS – Drain-to-Source Voltage (V) C – Capacitance (pF) V GS C rss C oss C iss V DS = 10 V I D = 3.6 A – On-Resistance (rDS(on) ) I D – Drain Current (A) Capacitance On-Resistance vs. Junction Temperature V GS = 4.5 V I D = 3.6 A T J – Junction Temperature (C) (Normalized) – On-Resistance (rDS(on) ) V GS = 2.5 V V GS = 4.5 V 25C XP151A13COMR 20V N-Channel Enhancement Mode MOSFET Date:2011/05 www.htsemi.comsemiconductor JinYu

Power (W) –0.4 –0.3 –0.2 –0.1 –0.0 0.1 0.2 –50 0 50 100 150 0.04 0.08 0.12 0.16 0.20 02468 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 0.1 0.01 Normalized Effective Transient Thermal Impedance – On-Resistance (rDS(on) ) V SD – Source-to-Drain Voltage (V) V GS – Gate-to-Source Voltage (V) – Source Current (A)IS T J – Temperature (C) Variance (V)V GS(th) 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 I D = 3.6 A I D = 250 /C0109A T J = 25C T J = 150C 0.01 0.10 1.00 10.00 Time (sec) T C = 25C Single Pulse XP151A13COMR 20V N-Channel Enhancement Mode MOSFET Date:2011/05 www.htsemi.comsemiconductor JinYu