WFW9N90 WISDOM | Alldatasheet
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■ RDS(on) (Max 1.3 Ω )@VGS=10V ■ Gate Charge (Typical 55nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. N-Channel MOSFET Wisdom Semiconductor Copyright@Wisdom Semiconductor Inc., All rights reserved. Symbol 2. Drain 3. Source 1. Gate PROVISIONAL TO-247 G SD
Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 900 - - V Δ BVDSS/ Δ TJ Breakdown Voltage Temperature coefficient ID = 250uA, referenced to 25 °C -1 . 0 0 -V / ° C IDSS Drain-Source Leakage Current VDS = 900V, VGS = 0V -- 1 0 u A VDS = 720V, TC = 125 °C -- 1 0 0 u A IGSS Gate-Source Leakage, Forward VGS = 30V, VDS = 0V -- 1 0 0 n A Gate-source Leakage, Reverse VGS = -30V, VDS = 0V - - -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 3.0 - 5.0 V RDS(ON) Static Drain-Source On-state Resis- tance VGS =10 V, ID = 4.5A -1 . 0 5 1 . 3 Ω Dynamic Characteristics Ciss Input Capacitance VGS =0 V, VDS =25V, f = 1MHz - 2100 - pFCoss Output Capacitance - 200 - Crss Reverse Transfer Capacitance - 25 - Dynamic Characteristics td(on) Turn-on Delay Time VDD =450V, ID =9.0A, RG =25Ω (Note 4, 5) - 50 - ns tr Rise Time - 100 - td(off) Turn-off Delay Time - 140 - tf Fall Time - 80 - Qg Total Gate Charge VDS =720V, VGS =10V, ID =9.0A (Note 4, 5) - 55 - nCQgs Gate-Source Charge - 15 - Qgd Gate-Drain Charge(Miller Charge) - 25 - Source-Drain Diode Ratings and Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit. IS Continuous Source Current Integral Reverse p-n Junction Diode in the MOSFET -- 9 . 0 AISM Pulsed Source Current - - 36.0 VSD Diode Forward Voltage I S =9.0A, VGS =0V - - 1.4 V trr Reverse Recovery Time IS=9.0A, VGS=0V, dIF/dt=100A/us -7 5 0 - n s Qrr Reverse Recovery Charge - 7.5 - uC WFW9N90 ※NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. L = 23mH, IAS =9.0A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C 3. ISD ≤ 9.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. Copyright@Wisdom Semiconductor Inc., All rights reserved.