WFP75N08 WISDOM | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

Features

■ RDS(on) (Max 0.015 Ω )@VGS=10V ■ Gate Charge (Typical 80nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (175°C) General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. N-Channel MOSFET Wisdom Semiconductor Copyright@Wisdom Semiconductor Inc., All rights reserved. Symbol 2. Drain 3. Source 1. Gate TO-220 1 2 3

Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 80 - - V Δ BVDSS/ Δ TJ Breakdown Voltage Temperature coefficient ID = 250uA, referenced to 25 °C -0 . 0 8 -V / ° C IDSS Drain-Source Leakage Current VDS = 80V, VGS = 0V -- 1 0 u A VDS = 64V, TC = 125 °C -- 1 0 0 u A IGSS Gate-Source Leakage, Forward VGS = 20V, VDS = 0V -- 1 0 0 n A Gate-source Leakage, Reverse VGS = -20V, VDS = 0V - - -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 2.0 - 4.0 V RDS(ON) Static Drain-Source On-state Resis- tance VGS =10 V, ID = 37.5A - 0.012 0.015 Ω Dynamic Characteristics Ciss Input Capacitance VGS =0 V, VDS =25V, f = 1MHz - 2600 3380 pFCoss Output Capacitance - 940 1220 Crss Reverse Transfer Capacitance - 210 275 Dynamic Characteristics td(on) Turn-on Delay Time VDD =40V, ID =75A, RG =25Ω (Note 4, 5) - 30 70 ns tr Rise Time - 225 460 td(off) Turn-off Delay Time - 165 340 tf Fall Time - 155 320 Qg Total Gate Charge VDS =64V, VGS =10V, ID =75A (Note 4, 5) - 80 105 nCQgs Gate-Source Charge - 15 - Qgd Gate-Drain Charge(Miller Charge) - 32 - Source-Drain Diode Ratings and Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit. IS Continuous Source Current Integral Reverse p-n Junction Diode in the MOSFET -- 7 5 AISM Pulsed Source Current - - 300 VSD Diode Forward Voltage I S =75A, VGS =0V - - 1.5 V trr Reverse Recovery Time IS=75A, VGS=0V, dIF/dt=100A/us -9 0 -n s Qrr Reverse Recovery Charge - 250 - uC WFP75N08 ※NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. L = 0.32mH, IAS =75A, VDD = 25V, RG = 25Ω , Starting TJ = 25°C 3. ISD ≤ 75A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. Copyright@Wisdom Semiconductor Inc., All rights reserved.

50KΩ 200nF12V Same Type as DUT Charge VGS 10V Qg Qgs Qgd 3mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT VGS VDS 10% 90% td(on) tr ton toff td(off) tf VDD 10V VDS RL DUT RG VGS VGS VDS 10% 90% td(on) tr ton toff td(off) tf VDD 10V VDS RL DUT RG VGS EAS =L IAS 2----2 BVDSS-VDD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time 10V DUT RG L ID t p EAS =L IAS 2----2 1EAS =L IAS 2----2 1----2 BVDSS-VDD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time 10V DUT RG LL IDID t p Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms

Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT V DS Dr i v e r R G Sam e Ty pe as DU T V GS • dv/ dt cont r ol l ed by R G

  • I SD cont r ol l ed by pul se per i od V DD L I SD 10V V GS ( D riv e r ) I SD ( D U T ) V DS ( D U T ) V DD Body Di ode For war d Vol t a g e Dr o p V SD I FM , Body Di ode For w ar d Cur r ent Body Di ode Rever se Cur r ent I RM Body Di ode Recover y dv/ dt di / dt D = G a te P u ls e W id th DUT V DS Dr i v e r R G Sam e Ty pe as DU T V GS • dv/ dt cont r ol l ed by R G
  • I SD cont r ol l ed by pul se per i od V DD LL I SD 10V V GS ( D riv e r ) I SD ( D U T ) V DS ( D U T ) V DD Body Di ode For war d Vol t a g e Dr o p V SD I FM , Body Di ode For w ar d Cur r ent Body Di ode Rever se Cur r ent I RM Body Di ode Recover y dv/ dt di / dt D = G a te P u ls e W id th

1.52 ±0.10 0.80 ±0.10 2.40 ±0.20 10.00 ±0.20 1.27 ±0.10 ø3.60 ±0.10 (8.70) 10.08 ±0.30 18.95MAX. (1.70) (3.70)(3.00) (1.46) (1.00) (45 1.30 ±0.10 1.30 +0.10 –0.05 0.50 +0.10 –0.05 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] TO-220