WFP830

WFP830 WISDOM | Alldatasheet

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Technical content

Features

■ RDS(on) (Max 1.4 Ω )@VGS=10V ■ Gate Charge (Typical 25nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply, motor control. N-Channel MOSFET Wisdom Semiconductor Symbol 2. Drain 3. Source 1. Gate TO-220 1 2 3

(Note 4) (Note 4, 5) (Note 4, 5) (Note 4) Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 21.0mH, IAS = 5.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 5.0A, di/dt ≤ 300µA/s, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 500 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.50 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 10 µA VDS = 400 V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.5 A -- 1.15 1.40 Ω Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 680 900 pF Coss Output Capacitance -- 85 110 pF Crss Reverse Transfer Capacitance -- 15 20 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 250V, ID = 5.0 A, RG = 25 Ω -- 20 50 ns tr Turn-On Rise Time -- 40 90 ns td(off) Turn-Off Delay Time -- 90 190 ns tf Turn-Off Fall Time -- 45 100 ns Qg Total Gate Charge VDS = 400 V, ID = 5.0A, VGS = 10 V -- 25 33 nC Qgs Gate-Source Charge -- 5 -- nC Qgd Gate-Drain Charge -- 10 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 5.0 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 20 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 5.0 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 5.0 A, dIF / dt = 100 A/µs -- 250 -- ns Qrr Reverse Recovery Charge -- 2.2 -- µC

50KΩ 200nF12V Same Type as DUT Charge VGS 10V Qg Qgs Qgd 3mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT VGS VDS 10% 90% td(on) tr ton toff td(off) tf VDD 10V VDS RL DUT RG VGS VGS VDS 10% 90% td(on) tr ton toff td(off) tf VDD 10V VDS RL DUT RG VGS EAS =L IAS 2----2 BVDSS-VDD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time 10V DUT RG L ID t p EAS =L IAS 2----2 1EAS =L IAS 2----2 1----2 BVDSS-VDD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time 10V DUT RG LL IDID t p Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms

V GS • dv/ dt cont r ol l ed by R G

• I SD cont r ol l ed by pul se per i od V DD L I SD 10V V GS ( D riv e r ) I SD ( D U T ) V DS ( DUT ) V DD Body D i ode For w ar d Vol t a g e D r o p V SD I FM , Body D i ode For w ar d C ur r ent Body D i ode R ever se C ur r ent I RM Body D i ode R ecover y dv/ dt di / dt D = G a te P u ls e W id th DUT V DS Dr i v e r R G Sam e Ty pe a s DUT V GS • dv/ dt cont r ol l ed by R G
• I SD cont r ol l ed by pul se per i od V DD LL I SD 10V V GS ( D riv e r ) I SD ( D U T ) V DS ( DUT ) V DD Body D i ode For w ar d Vol t a g e D r o p V SD I FM , Body D i ode For w ar d C ur r ent Body D i ode R ever se C ur r ent I RM Body D i ode R ecover y dv/ dt di / dt D = G a te P u ls e W id th Peak Diode Recovery dv/dt Test Circuit & Waveforms

Dim. mm Inch A 9.7 10.1 0.382 0.398 B 6.3 6.7 0.248 0.264 C 9.0 9.47 0.354 0.373 D 12.8 13.3 0.504 0.524 E 1.2 1.4 0.047 0.055 F 1.7 0.067 G 2.5 0.098 H 3.0 3.4 0.118 0.134 I 1.25 1.4 0.049 0.055 J 2.4 2.7 0.094 0.106 K 5.0 5.15 0.197 0.203 L 2.2 2.6 0.087 0.102 M 1.25 1.55 0.049 0.061 N 0.45 0.6 0.018 0.024 O 0.6 1.0 0.024 0.039 Ø 3.6 0.142 1. Gate 2. Drain 3. Source A B C I G L M E F φH K N O J D