WFW20N60 WISDOM | Alldatasheet
Document overview
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Technical content
Features
□ Low Intrinsic Capacitances □ Excellent Switching Characteristics TO‐3P G‐Gate,D‐Drain,S‐Sourse □ Extended Safe Operating Area □ Unrivalled Gate Charge :98 nC (Typ.) □ BVDSS=600V,ID=20A □ Lower R DS(on) : 0.45Ω (Max) @VG=10V □ 100% Avalanche Tested Absolute Maximum Ratings Tc=25 unless other wise noted Symbol Parameter WFW20N60 Units V DSS Drain-Sourse Voltage 600 V I D Drain Current -continuous (Tc=25 ℃) 20 A -continuous (Tc=100℃) 12.7 A V GS Gate-Sourse Voltage ±30 V E AS Single Plused Avanche Energy (Note1) 690 mJ I AR Avalanche Current (Note2) 20 A P D Power Dissipation (Tc=25℃) 208 W T J STG Operating and Storage Temperature Range -55 ~ +150 ℃ TL Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds 300 ℃ Thermal Characteristics Symbol Parameter Typ. Max Units R θJC Thermal Resistance,Junction to Case -- 0.48 ℃/W R θJA Thermal Resistance,Junc tion to Ambient -- 41.7 ℃/W www.wisdom-technologies.com
Rev.A0,August , 2010 |
Electrical Characteristics
Tc=25℃ unless other wise noted Symbol Parameter Test Condition Min. Typ. Max Units Off Characteristics BV DSS Drain-Sourse Breakdown Voltage ID=250μA，VGS=0 600 -- -- V △BV DSS J Breakdown Voltage Temperature Conficient I D =250 μA,Reference IDSS Zero Gate Voltage Drain Current Vds=600V, Vgs=0V -- -- 1 μA Vds=480V, Tc=125℃ 10 μA IGSSF Gate-body leakage Current, Forward Vgs=+30V, Vds=0V -- -- 100 nA IGSSR Gate-body leakage Current, Reverse Vgs=-30V, Vds=0V -- -- -100 nA On Characteristics V GS(th) Date Threshold Voltage Id=250uA,Vds=Vgs 2 -- 4 V R DS(on) Static Drain-Sourse On-Resist ance Id=10A,Vgs=10V -- -- 0.3 Ω Dynamic Characteristics Ciss Input Capacitance VDS=25V，VGS=0， f=1.0MHz -- 1730 2250 pF Coss Output Capacitance -- 960 1150 pF Crss Reverse Transfer Capacitance -- 85 -- pF Switching Characteristics Td(on) Turn-On Delay Time VDD=300V，ID=20A， RG=25Ω (Note 3,4) -- 46 90 nS Tr Turn-On Rise Time -- 140 280 nS Td(off) Turn-Off Delay Time -- 175 350 nS Tf Turn-Off Fall Time -- 100 200 nS Qg Total Gate Charge VDS=480,VGS=10V， ID=20A (Note 3,4) -- 57 72 nC Qgs Gate-Sourse Charge -- 11.5 14 nC Qgd Gate-Drain Charge 28 -- nC Drain-Sourse Diode Characteristics and Maximum Ratings I S Maximun Continuous Drain-Sourse Diode Forward Current -- -- 20 A I SM Maximun Plused Drain-Sourse DiodeForwad Current -- -- 60 A V SD Drain-Sourse Diode Forward Voltage Id=20A -- -- 1.4 V trr Reverse Recovery Time I S =20A,V GS =0V di F /dt=100A/μs (Note3) -- 450 -- nS Qrr Reverse Recovery Charge -- 8.2 -- μC *Notes 1, L=3.2mH, IAS=20.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 2, Repetitive Rating : Pulse width limited by maximum junction temperature 3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 4, Essentially Independent of Operating Temperature www.wisdom-technologies.com
Rev.A0,August , 2010 | Typical Characteristics www.wisdom-technologies.com
Rev.A0,August , 2010 | Typical Characteristics (Continued) www.wisdom-technologies.com
Rev.A0,August , 2010 | www.wisdom-technologies.com
Rev.A0,August , 2010 | www.wisdom-technologies.com
Rev.A0,August , 2010 | Package Dimension www.wisdom-technologies.com