WFR630

WFR630 WISDOM | Alldatasheet

Document overview

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Technical content

Features

■ RDS(on) (Max 0.4 Ω )@VGS=10V ■ Gate Charge (Typical 22nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply, motor control. N-Channel MOSFET Wisdom Semiconductor Symbol 2. Drain 3. Source 1. Gate * When mounted on the minimum pad size recommended (PCB Mount) SOT-82 2 3

(Note 4) (Note 4, 5) (Note 4, 5) (Note 4) Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 4.9mH, IAS = 7A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 9A, di/dt ≤ 300µA/s, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 200 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.20 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 200 V, VGS = 0 V -- -- 1 µA VDS = 160 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 3.5 A -- 0.35 0.4 Ω gFS Forward Transconductance VDS = 40 V, ID = 3.5 A -- 7.0 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 550 720 pF Coss Output Capacitance -- 85 110 pF Crss Reverse Transfer Capacitance -- 22 29 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 100 V, ID = 9 A, RG = 25 Ω -- 30 70 ns tr Turn-On Rise Time -- 65 140 ns td(off) Turn-Off Delay Time -- 75 160 ns tf Turn-Off Fall Time -- 50 110 ns Qg Total Gate Charge VDS = 160 V, ID = 9 A, VGS = 10 V -- 22 29 nC Qgs Gate-Source Charge -- 3.5 -- nC Qgd Gate-Drain Charge -- 10.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 7.0 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 28 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 7 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 9 A, dIF / dt = 100 A/µs -- 150 -- ns Qrr Reverse Recovery Charge -- 0.68 -- µC WFR630

50KΩ 200nF12V Same Type as DUT Charge VGS 10V Qg Qgs Qgd 3mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT VGS VDS 10% 90% td(on) tr ton toff td(off) tf VDD 10V VDS RL DUT RG VGS VGS VDS 10% 90% td(on) tr ton toff td(off) tf VDD 10V VDS RL DUT RG VGS EAS =L IAS 2----2 BVDSS-VDD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time 10V DUT RG L ID t p EAS =L IAS 2----2 1EAS =L IAS 2----2 1----2 BVDSS-VDD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time 10V DUT RG LL IDID t p Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms

V GS • dv/ dt cont r ol l ed by R G

• I SD cont r ol l ed by pul se per i od V DD L I SD 10V V GS ( D riv e r ) I SD ( D U T ) V DS ( DUT ) V DD Body D i ode For w ar d Vol t a g e D r o p V SD I FM , Body D i ode For w ar d C ur r ent Body D i ode R ever se C ur r ent I RM Body D i ode R ecover y dv/ dt di / dt D = G a te P u ls e W id th DUT V DS Dr i v e r R G Sam e Ty pe a s DUT V GS • dv/ dt cont r ol l ed by R G
• I SD cont r ol l ed by pul se per i od V DD LL I SD 10V V GS ( D riv e r ) I SD ( D U T ) V DS ( DUT ) V DD Body D i ode For w ar d Vol t a g e D r o p V SD I FM , Body D i ode For w ar d C ur r ent Body D i ode R ever se C ur r ent I RM Body D i ode R ecover y dv/ dt di / dt D = G a te P u ls e W id th Peak Diode Recovery dv/dt Test Circuit & Waveforms

Dim. mm Inch A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.425 b 0.7 0.9 0.395 0.035 b1 0.49 0.75 0.019 0.029 C 2.4 2.7 0.094 0.106 c1 1.0 1.3 0.039 0.051 D 15.4 16.0 0.606 0.630 e 2.2 0.086 e3 4.15 4.65 0.163 0.183 F 3.8 0.149 H2 . 5 4 0 . 1 0 0 H2 2.15 0.084 I 1.27 0.05 O 0.3 0.012 V 10 degree 10 degree