WFP4N60_10 WISDOM | Alldatasheet

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Technical content

Features

□ Low Intrinsic Capacitances □ Excellent Switching Characteristics TO‐220 G‐Gate,D‐Drain,S‐Sourse □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 15nC (Typ.) □ BVDSS=600V,ID=4A □ R DS(on) :2.3 Ω (Max) @VG=10V □ 100% Avalanche Tested Absolute Maximum Ratings Tc=25 unless other wise noted Symbol Parameter WFP4N60 Units V DSS Drain-Sourse Voltage 600 V I D Drain Current -continuous (Tc=25 ℃) 4 A -continuous (Tc=100℃) 2.8 A V GS Gate-Sourse Voltage ±30 V E AS Single Plused Avanche Energy ( Note1) 240 mJ I AR Avalanche Current (Note2) 4 A P D Power Dissipation (Tc=25℃) 100 W T J STG Operating and Storage Temperature Range -55 ~ +150 ℃ TL Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds 300 ℃ Thermal Characteristics Symbol Parameter Typ. Max Units R θJC Thermal Resistance,Junction to Case -- 1.18 ℃/W R θCS Thermal Resistance,Case to Sink 0.5 -- ℃/W R θJA Thermal Resistance,Junc tion to Ambient -- 62.5 ℃/W G SD

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Rev.A0,August , 2010 |

Electrical Characteristics

Tc=25℃ unless other wise noted Symbol Parameter Test Condition Min. Typ. Max Units Off Characteristics BV DSS Drain-Sourse Breakdown Voltage ID=250μA，VGS=0 600 -- -- V △BV DSS J Breakdown Voltage Temperature Conficient I D =250μA,Reference IDSS Zero Gate Voltage Drain Current Vds=600V, Vgs=0V -- -- 10 μA Vds=480V, Tc=125℃ 100 μA IGSSF Gate-body leakage Current, Forward Vgs=+30V, Vds=0V -- -- 100 nA IGSSR Gate-body leakage Current, Reverse Vgs=-30V, Vds=0V -- -- -100 nA On Characteristics V GS(th) Date Threshold Voltage Id=250uA,Vds=Vgs 2 -- 4 V R DS(on) Static Drain-Sourse On-Resistance Id=2A,Vgs=10V -- -- 2.3 Ω Dynamic Characteristics Ciss Input Capacitance VDS=25V，VGS=0， f=1.0MHz -- 520 670 pF Coss Output Capacitance -- 70 90 pF Crss Reverse Transfer Capacitance -- 8 11 pF Switching Characteristics Td(on) Turn-On Delay Time VDD=300V，ID=4A RG=25Ω (Note 3,4) -- 13 35 nS Tr Turn-On Rise Time -- 45 100 nS Td(off) Turn-Off Delay Time -- 25 60 nS Tf Turn-Off Fall Time -- 35 80 nS Qg Total Gate Charge VDS=480,VGS=10V， ID=4A (Note 3,4) -- 15 20 nC Qgs Gate-Sourse Charge -- 3.4 -- nC Qgd Gate-Drain Charge 7.1 -- nC Drain-Sourse Diode Characteristics and Maximum Ratings I S Maximun Continuous Drain-Sourse Diode Forward Current -- -- 4 A I SM Maximun Plused Drain-Sourse DiodeForwad Current -- -- 16 A V SD Drain-Sourse Diode Forward Voltage Id=4A -- -- 1.25 V trr Reverse Recovery Time I S =4A,V GS =0V di F /dt=100A/μs (Note3) -- 250 -- nS Qrr Reverse Recovery Charge -- 1.25 -- μC *Notes 1, L=27.5mH, IAS=4A, VDD=50V, RG=25Ω, Starting TJ =25°C 2, Repetitive Rating : Pulse width limited by maximum junction temperature 3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 4, Essentially Independent of Operating Temperature www.wisdom-technologies.com

Rev.A0,August , 2010 | Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms Charge V GS 10V Q g Q gs Q gd 3mA V GS DUT V DS 300nF 50KΩ 200nF12V Same Type as DUT Charge V GS 10V Q g Q gs Q gd 3mA V GS DUT V DS 300nF 50KΩ 200nF12V Same Type as DUT V GS V DS 10% 90% t d(on) t r t on t off t d(off) t f V DD 10V V DS R L DUT R G V GS V GS V DS 10% 90% t d(on) t r t on t off t d(off) t f V DD 10V V DS R L DUT R G V GS E AS =L I AS ----2 BV DSS DD BV DSS V DD V DS BV DSS t p V DD I AS V DS (t) I D (t) Time 10V DUT R G L I D t p E AS =L I AS ----2 AS =L I AS ----2 1----2 BV DSS DD BV DSS V DD V DS BV DSS t p V DD I AS V DS (t) I D (t) Time 10V DUT R G L L I D I D t p Gate Charge Test Circuit & Waveform www.wisdom-technologies.com

Rev.A0,August , 2010 | Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT V DS Driver R G Same Type as DUT V GS  dv/dt controlled by R G SD controlled by pulse period V DD L I SD 10V V GS ( Driver ) I SD ( DUT ) V DS ( DUT ) V DD Body Diode Forward Voltage Drop V SD I FM , Body Diode Forward Current Body Diode Reverse Current I RM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT V DS Driver R G Same Type as DUT V GS  dv/dt controlled by R G SD controlled by pulse period V DD L L I SD 10V V GS ( Driver ) I SD ( DUT ) V DS ( DUT ) V DD Body Diode Forward Voltage Drop V SD I FM , Body Diode Forward Current Body Diode Reverse Current I RM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width www.wisdom-technologies.com