WFN1N60 WISDOM | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Features

□ Low Intrinsic Capacitances □ Excellent Switching Characteristics G‐Gate,D‐Drain,S‐Sourse □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 10nC (Typ.) □ BVDSS=600V,ID=1A □ R DS(on) : 8 Ω (Max) @VG=10V □ 100% Avalanche Tested Absolute Maximum Ratings Tc=25 unless other wise noted Symbol Parameter V DSS Drain-Sourse Voltage 600 V I D Drain Current -continuous (Tc=25 ℃) 1* A -continuous (Tc=100℃) 0.63* A V GS Gate-Sourse Voltage ±30 V E AS Single Plused Avanche Energy (Note1) 25 mJ I AR Avalanche Current (Note2) 1 A P D Power Dissipation (Tc=25℃) 23 W T J STG Operating and Storage Temperature Range -55 ~ +150 ℃ TL Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds 300 ℃ Thermal Characteristics Symbol Parameter Typ. Max Units R θJC Thermal Resistance,Junction to Case -- ℃/W R θJA Thermal Resistance,Junc tion to Ambient -- 40 ℃/W * Drain current limited by maximum junction temperature.

  • ●●●
  • ●●●
  • ●●● ▲▲▲▲ !!!! !!!! !!!! ◀◀◀◀
  • ●●●
  • ●●●
  • ●●● ▲▲▲▲ !!!! !!!! !!!! ◀◀◀◀ S D G TO-92 Units www.wisdom-technologies.com WFN1 N60

Rev.A0,August , 2010 |

Electrical Characteristics

Tc=25℃ unless other wise noted Symbol Parameter Test Condition Min. Typ. Max Units Off Characteristics BV DSS Drain-Sourse Breakdown Voltage ID=250μA，VGS=0 600 -- -- V △BV DSS J Breakdown Voltage Temperature Conficient I D =250μA,Reference to 25℃ -- 3 -- V/℃ IDSS Zero Gate Voltage Drain Current Vds=600V, Vgs=0V -- -- 1 μA Vds=480V, Tc=125℃ 10 μA IGSSF Gate-body leakage Current, Forward Vgs=+30V, Vds=0V -- -- 100 nA IGSSR Gate-body leakage Current, Reverse Vgs=-30V, Vds=0V -- -- -100 nA On Characteristics V GS(th) Date Threshold Voltage Id=250uA,Vds=Vgs 2 -- 4 V R DS(on) Static Drain-Sourse On-Resistance Id=0.5A,Vgs=10V -- -- 8 Ω Dynamic Characteristics Ciss Input Capacitance VDS=25V，VGS=0， f=1.0MHz -- 156 pF Coss Output Capacitance Crss Reverse Transfer Capacitance -- 3.8 pF Switching Characteristics Td(on) Turn-On Delay Time VDD=300V，ID=1A RG=25Ω (Note 3,4) -- 7 10 nC Tr Td(off) Turn-Off Delay Time -- 19 -- nS Tf Turn-Off Fall Time -- 25 -- nS Qg Total Gate Charge VDS=480,VGS=10V， ID=1A ( Note 3,4) Qgs Gate-Sourse Charge -- 1.1 -- nC Qgd Gate-Drain Charge 3.4 -- nC Drain-Sourse Diode Characteristics and Maximum Ratings I S Maximun Continuous Drain-Sourse Diode Forward Current -- -- 1 A I SM Maximun Plused Drain-Sourse DiodeForwad Current -- -- 4 A V SD Drain-Sourse Diode Forward Voltage Id=1A -- -- 1.5 V trr Reverse Recovery Time I S =1A,V GS =0V di F /dt=100A/μs (Note3) -- 229 -- nS Qrr Reverse Recovery Charge -- 337 -- μC *Notes 1, L=55mH, IAS=1.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 2, Repetitive Rating : Pulse width limited by maximum junction temperature 3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 4, Essentially Independent of Operating Temperature -- 23.6 pF -- 6.5 -- nS Rise Time -- 5 -- nS www.wisdom-technologies.com

Rev.A0,August , 2010 | Typical Characteristics Output Characteristics Transfer Characteristics Static Drain-source On ResistanceTransconductance www.wisdom-technologies.com

Rev.A0,August , 2010 | Typical Characteristics (Continued) Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs Temp. Gate Charge vs Gate-source Voltage Capacitance Variations www.wisdom-technologies.com

Rev.A0,August , 2010 | Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4:Gate Charge test Circuit Fig. 2:Unclamped Inductive WaveformFig. 1:Unclamped Inductive Load Test Circuit Fig. 3:Switching Times Test Circuit For Resistive Load www.wisdom-technologies.com