WE060NG DOINGTER | Alldatasheet

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www.doingter.cn — 1 — WE060NG Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=60V,ID=10A,RDS(ON)<58mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ 10 A Continuous Drain Current-TC=100℃ 8 IDM ** Pulsed Drain Current 20 IS 20 A PD Power Dissipation 35 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 3.5 ℃/W RƟJA Thermal Resistance Junction to mbient** 50 ℃/W G D S Continuous-Source Current A ll data sheet.com

www.doingter.cn — 2 — WE060NG Package Marking and Ordering Information： Part NO. Marking Package WE060NG SOT-89 Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 60 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=48V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 --- 2 V RDS(ON) a Drain-Source On Resistance VGS=10V,ID=6A --- 50 58 mΩ VGS=4.5V,ID=1A --- 58 68 Dynamic Characteristics Ciss Input Capacitance VDS=30V, VGS=0V, f=1MHz --- 651 --- pF Coss Output Capacitance --- 28 --- Crss Reverse Transfer Capacitance --- 26 --- Switching Characteristics td(on) Turn-On Delay Time VDD=30V,ID=6A,RG=4.5Ω VGS=10V --- 5 --- ns tr Rise Time --- 21 --- ns td(off) Turn-Off Delay Time --- 15 --- ns tf Fall Time --- 23 --- ns Qg Total Gate Charge VGS=10V, VDS=30V, ID=6A --- 12 --- nC Qgs Gate-Source Charge --- 3 --- nC Qgd Gate-Drain “Miller” Charge --- 1.5 --- nC Drain-Source Diode Characteristics Symbol Parameter Conditions Min Typ Max Units VSD a Source-Drain Diode Forward Voltage VGS=0V,IS=6A --- --- 1.3 V E060N A ll data sheet.com

www.doingter.cn — 3 — WE060NG Trr Reverse Recovery Time 26 --- NS Qrr Reverse Recovery Charge 2.8 --- NC Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) * Pulse width  300 s, duty cycle  2 % Mounted on Large Heat Sink * limited by bonding wire a : Pulse test ; pulse width  300 s, duty cycle  2% b : Guaranteed by design, not subject to production testing Power Capability Current Capability Pt ot - P ower ( ID - D rain Current (A) Tmp – Mounting Point Temp. (° C) Tmp – Mounting Point Temp. (° C) Safe Operating Area Transient Thermal Impedance ID - D rain Current (A) N ormalized Effective Transient VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) 0 20 40 60 80 100 120 140 160 TC= o C ,VG= 10V .01 0.1 1 10 100 500 100 0us 0us sRds(on) Limit TC= o C ms 0ms DC 0 20 40 60 80 100 120 140 160 180 TC= o C E-4 1E-3 0.01 0.1 1 10 100 E-3 0.01 0.1 M ounted on 1in pad RJC :3.5 o C S ingle Pulse D uty = 0.5 IDS = 6 A , VGS = 0 V dlSD/dt = 100 A/μs A ll data sheet.com

www.doingter.cn — 4 — WE060NG Output Characteristics On Resistance ID - D rain Current (A) RDS (ON) - O n Resistance (mΩ) VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Normalized Threshold Voltage RDS (ON) - O n Resistance (mΩ) N ormalized Threshold Voltage VGS - Gate-Source Voltage (V) Tj - Junction Temperature (° C) 50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS= 250A 0 1 2 3 4 5 6 7 8 9 10 100 125 150 175 200 IDS= 0 1 2 3 4 5 6 7 8 9 10 VGS= 4.5V VGS= 10V VGS= 4,5,6,7,8,9,10V A ll data sheet.com

www.doingter.cn — — WE060NG Normalized On Resistance Diode Forward Current N ormalized On Resistance IS - S ource Current (A) Tj - Junction Temperature (° C) VSD - Source-Drain Voltage (V) Capacitance Gate Charge C - C apacitance (pF) VGS - G ate-S ource Voltage (V) VDS - Drain-Source Voltage (V) QG - Gate Charge (nC) 0 10 20 30 40 50 100 200 300 400 500 600 700 800 900 1000 Fr equency=1MHz C rss C oss C iss 0 4 8 12 VDS= 30V IDS = 6A 50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 RON@Tj= o C: 53m VGS = 10V IDS = 6A Tj= o C Tj= 150 o C A ll data sheet.com