WAS310M17BM3

WAS310M17BM3 WOLFSPEED | Alldatasheet

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Technical content

Rev. 0, November 2022 © 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in this document is subject to change without notice. 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 | wolfspeed.com/power WAS310M17BM3 Technical Features

• Industry Standard 62mm Footprint
• High Humidity Operation THB-80 (HV-H3TRB)
• Ultra Low Loss , High-Frequency Operation
• Zero Reverse Recovery from Diodes
• Zero Turn-off Tail Current from MOSFET
• Normally-off, Fail-safe Device Operation
• Copper Baseplate and Aluminum Nitride Insulator

Applications

• Induction Heating
• Motor Drives
• Renewables
• Railway Auxiliary & Traction
• EV Fast Charging
• UPS and SMPS

1700 V, 310 A, Silicon Carbide, Half-Bridge Module

• 62mm Form Factor Enables System Retrofit
• Increased System Efficiency, due to Low Switching & Conduction Losses of SiC Maximum Parameters (Verified by Design) Parameter Symbol Min. Typ. Max. Unit Test Conditions Note Drain-Source Voltage VDS 1700 VGate-Source Voltage, Maximum Value VGS max -8 +19 Transient, <100 ns Fig. 33 Gate-Source Voltage, Recommended VGS op -4 +15 Static DC Continuous Drain Current ID 399 A VGS = 15 V, TC = 25 °C, TVJ ≤ 175 °C Fig. 21

307 VGS = 15 V, TC = 90 °C, TVJ ≤ 175 °C

DC Source-Drain Current (Diode) ISD

482 VGS = - 4 V, TC = 25 °C, TVJ ≤ 175 °C

345 VGS = - 4 V, TC = 90 °C, TVJ ≤ 175 °C

Pulsed Drain Current ID (pulsed) 620 tPmax limited by TVJmax VGS = 15 V, TC = 25 °C Virtual Junction Temperature TVJ op -40 150 Operation

175 Intermittent with Reduced Life

Rev. 0, November 2022 © 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in this document is subject to change without notice. 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 | wolfspeed.com/power MOSFET Characteristics (Per Position) (TVJ = 25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Note Drain-Source Breakdown Voltage V(BR)DSS 1700 V VGS = 0 V, TVJ = -40 °C Gate Threshold Voltage VGS(th) 1.8 2.5 3.8 VDS = VGS, ID = 102 mA

2.0 VDS = VGS, ID = 102 mA, TVJ = 175 °C

Zero Gate Voltage Drain Current IDSS 26.4 2560 μA VGS = 0 V, VDS = 1700 V Gate-Source Leakage Current IGSS 4 1000 nA VGS = 15 V, VDS = 0 V Drain-Source On-State Resistance (Devices Only) RDS(on) 4.29 5.80 mΩ VGS = 15 V, ID = 310 A Fig. 2 Fig. 38.42 VGS = 15 V, ID = 310 A, TVJ = 150 °C Transconductance gfs 290 S VDS = 20 V, ID = 310 A Fig. 4

284 VDS = 20 V, ID = 310 A, TVJ = 150 °C

Turn-On Switching Energy, TVJ = 25 °C TVJ = 125 °C TVJ = 150 °C EOn 4.4 4.1 4.0 mJ VDD = 900 V, ID = 310 A, VGS = -4 V/15 V, RG(OFF) = 1.0 Ω, RG(ON) = 1.0 Ω, L = 13.6 μH Fig. 11 Fig. 13Turn-Off Switching Energy, TVJ = 25 °C TVJ = 125 °C TVJ = 150 °C EOff 7.2 7.4 7.4 Internal Gate Resistance RG(int) 1.85 Ω f = 100 kHz, VAC = 25 mV Input Capacitance Ciss 31.5 nF VGS = 0 V, VDS = 1000 V, VAC = 25 mV, f = 100 kHz Fig. 9Output Capacitance Coss 1.8 Reverse Transfer Capacitance Crss 45 pF Gate to Source Charge QGS 320 nC VDS = 1200 V, VGS = -4 V/15 V, ID = 310 A, Per IEC60747-8-4 pg 21 Gate to Drain Charge QGD 280 Total Gate Charge QG 996 FET Thermal Resistance, Junction to Case Rth JC 0.092 °C/W Fig. 17 Diode Characteristics (Per Position) (TVJ = 25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Note Diode Forward Voltage VF 1.78 V VGS = -4 V, IF = 310 A, TVJ = 25 °C Fig. 7

2.50 VGS = -4 V, IF = 310 A, TVJ = 150 °C

Reverse Recovery Time trr 27 ns VGS = -4 V, ISD = 310 A, VR = 900 V di/dt = 26.5 A/ns, TVJ = 150 °C Fig. 32Reverse Recovery Charge Qrr 4.5 μC Peak Reverse Recovery Current Irrm 281 A Reverse Recovery Energy, TVJ = 25 °C TVJ = 125 °C TVJ = 150 °C Err 3.5 3.8 3.9 mJ VDS = 900 V, ID = 310 A, VGS = -4 V/15 V, RG(ext) = 1.0 Ω, L = 13.6 μH Fig. 14 Note 1 Diode Thermal Resistance, JCT . to Case Rth JC 0.086 °C/W Fig. 18 Note: 1 SiC Schottky diodes do not have reverse recovery energy but still contribute capacitive energy.

Rev. 0, November 2022 © 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in this document is subject to change without notice. 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 | wolfspeed.com/power Module Physical Characteristics Parameter Symbol Min. Typ. Max. Unit Test Conditions Package Resistance, M1 (High-Side) R3-1 1.31 mΩ TC = 25 °C, ISD = 310 A, Note 2

1.84 TC = 125 °C, ISD = 310 A, Note 2

Package Resistance, M2 (Low-Side) R1-2

1.26 TC = 25 °C, ISD = 310 A, Note 2

1.77 TC = 125 °C, ISD = 310 A, Note 2

Stray Inductance LStray 11.1 nH Between DC- and DC+, f = 10 MHz Case Temperature TC -40 125 °C Mounting Torque MS 4 5 5.5 N-m Baseplate, M6-1.0 bolts 4 5 5.5 Power Terminals, M6-1.0 bolts Weight W 300 g Case Isolation Voltage Visol 5 kV AC, 50 Hz, 1 minute Clearance Distance mm Terminal to Terminal

30 Terminal to Baseplate

30 Terminal to Terminal

40 Terminal to Baseplate

Note: 2 Total Effective Resistance (Per Switch Position) = MOSFET RDS(on) + Switch Position Package Resistance

Rev. 0, November 2022 © 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in this document is subject to change without notice. 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 | wolfspeed.com/power Schematic and Pin Out Package Dimension (mm) D D C C B B A A Mid WAS310M17BM3 HA2103-A010

Rev. 0, November 2022 © 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in this document is subject to change without notice. 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 | wolfspeed.com/power Supporting Links & Tools Evaluation Tools & Support

• SpeedFit 2.0 Design Simulator™
• Technical Support Forum Dual-Channel Gate Driver Board
• CGD12HB00D: Differential Transceiver Daughter Board Companion Tool for Differential Gate Drivers Application Notes
• CPWR-AN35: 62mm Module Thermal Interface Material Application Note
• CPWR-AN34: 62mm Module Mounting Guide Application Note
• CPWRAN12: Understanding the Effects of Parasitic Inductance Part 1.
• CPWRAN13: Understanding the Effects of Parasitic Inductance Part 2.

Rev. 0, November 2022 © 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in this document is subject to change without notice. 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 | wolfspeed.com/power Contact info:

4600 Silicon Drive

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