C3M0120065J WOLFSPEED | Alldatasheet

Document overview

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  • PDF pages: 11

Technical content

Features

  • 3rd Generation SiC MOSFET technology
  • Low inductance package with driver source pin
  • 7mm of creepage distance between drain and source
  • High blocking voltage with low on-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant Benefits
  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency
  • Easy to parallel and simple to drive
  • Enable new hard switching PFC topologies (Totem-Pole)

Applications

  • Solar inverters
  • DC/DC converters
  • Switch Mode Power Supplies
  • EV battery chargers
  • UPS Package Part Number Package Marking C3M0120065J TO-263-7 C3M0120065J VDS 650 V I D @ 25˚C 21 A RDS(on) 120 mΩ 1 2 3 4 5 6 7 G KS S S S S S TAB Drain Drain (TAB) Power Source (Pin 3,4,5,6,7) Driver Source (Pin 2) Gate (Pin 1) Maximum Ratings Symbol Parameter Value Unit Note VDSS Drain - Source Voltage, TC = 25 ˚C 650 V VGS Gate - Source voltage (Under transient events < 100 ns) -8/+19 V Fig. 28 ID Continuous Drain Current, VGS = 15 V, TC = 25˚C 21 A Fig. 19 Continuous Drain Current, VGS = 15 V, TC = 100˚C 15 ID(pulse) Pulsed Drain Current, Pulse width tP limited by Tjmax 51 A PD Power Dissipation, TC=25˚C, TJ = 175 ˚C 86 W Fig. 20 TJ , Tstg Operating Junction and Storage Temperature -40 to +175 ˚C TL Solder Temperature, 1.6mm (0.063”) from case for 10s 260 ˚C

C3M0120065J Rev. 1, 01-2021 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 650 V VGS = 0 V, ID = 100 μA VGSon Gate-Source Recommended Turn-On Voltage 15 V Static Fig. 29 VGSoff Gate-Source Recommended Turn-Off Voltage -4 V VGS(th) Gate Threshold Voltage 1.8 2.3 3.6 V VDS = VGS, ID = 1.86 mA Fig. 11 1.9 V VDS = VGS, ID = 1.86 mA, TJ = 175ºC IDSS Zero Gate Voltage Drain Current 1 50 μA VDS = 650 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance 120 157 mΩ VGS = 15 V, ID = 6.76 A Fig. 4, 5,6 168 VGS = 15 V, ID = 6.76 A, TJ = 175ºC gfs Transconductance 5.0 S VDS= 20 V, IDS= 6.76 A Fig. 7 4.9 VDS= 20 V, IDS= 6.76 A, TJ = 175ºC Ciss Input Capacitance 640 pF VGS = 0 V, VDS = 0V to 400 V F = 1 Mhz VAC = 25 mV Fig. 17, 18Coss Output Capacitance 45 Crss Reverse Transfer Capacitance 2.3 Co(er) Effective Output Capacitance (Energy Related) 57 VGS = 0 V, VDS = 0V to 400 V Note: 1 Co(tr) Effective Output Capacitance (Time Related) 79 Note: 1 Eoss Coss Stored Energy 4.3 μJ VDS = 400 V, F = 1 Mhz Fig. 16 EON Turn-On Switching Energy (Body Diode) 28 μJ VDS = 400 V, VGS = -4 V/15 V, ID = 6.76 A, RG(ext) = 10 Ω, L= 237 μH, TJ = 175ºC FWD = Internal Body Diode of MOSFET Fig. 25 EOFF Turn Off Switching Energy (Body Diode) 6 td(on) Turn-On Delay Time 8 ns VDD = 400 V, VGS = -4 V/15 V ID = 6.76 A, RG(ext) = 10 Ω Timing relative to VDS Inductive load Fig. 26 tr Rise Time 9 td(off) Turn-Off Delay Time 18 tf Fall Time 9 RG(int) Internal Gate Resistance 6 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 8 nC VDS = 400 V, VGS = -4 V/15 V ID = 6.76 A Per IEC60747-8-4 pg 21 Fig. 12Qgd Gate to Drain Charge 7 Qg Total Gate Charge 26 Note (1): Co(er), a lumped capacitance that gives same stored energy as Coss while Vds is rising from 0 to 400V Co(tr), a lumped capacitance that gives same charging time as Coss while Vds is rising from 0 to 400V

C3M0120065J Rev. 1, 01-2021 Reverse Diode Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Typ. Max. Unit Test Conditions Note VSD Diode Forward Voltage 4.5 V VGS = -4 V, ISD = 3.4 A, TJ = 25 °C Fig. 8, 9, 104.0 V VGS = -4 V, ISD = 3.4 A, TJ = 175 °C IS Continuous Diode Forward Current 15 A VGS = -4 V, TC = 25˚C IS, pulse Diode pulse Current 51 A VGS = -4 V, pulse width tP limited by Tjmax trr Reverse Recover time 8 ns VGS = -4 V, ISD = 6.76 A, VR = 400 V dif/dt = 5470 A/µs, TJ = 175 °CQrr Reverse Recovery Charge 78 nC Irrm Peak Reverse Recovery Current 16 A trr Reverse Recover time 9 ns VGS = -4 V, ISD = 6.76 A, VR = 400 V dif/dt = 3650 A/µs, TJ = 175 °CQrr Reverse Recovery Charge 41 nC Irrm Peak Reverse Recovery Current 7 A Thermal Characteristics Symbol Parameter Typ. Unit Test Conditions Note RθJC Thermal Resistance from Junction to Case 1.73 °C/W Fig. 21 RθJA Thermal Resistance From Junction to Ambient 40

C3M0120065J Rev. 1, 01-2021 Package Dimensions Package 7L D2PAK Dim All Dimensions in Millimeters Min typ Max A 4.300 4.435 4.570 A1 0.00 0.125 0.25 b 0.500 0.600 0.700 b2 0.600 0.800 1.000 c 0.330 0.490 0.650 C2 1.170 1.285 1.400 D 9.025 9.075 9.125 D1 4.700 4.800 4.900 E 10.130 10.180 10.230 E1 6.500 7.550 8.600 E2 6.778 7.223 7.665 e 1.27 H 15.043 16.178 17.313 L 2.324 2.512 2.700 L1 0.968 1.418 1.868 Ø 0˚ 4˚ 8˚ Ø1 4.5˚ 5˚ 5.5˚

C3M0120065J Rev. 1, 01-2021 Copyright © 2021 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.wolfspeed.com/power

  • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
  • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen- tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Notes Related Links
  • SPICE Models: http:/ /wolfspeed.com/power/tools-and-support
  • SiC MOSFET Isolated Gate Driver reference design: http:/ /wolfspeed.com/power/tools-and-support
  • SiC MOSFET Evaluation Board: http:/ /wolfspeed.com/power/tools-and-support