C3M0120090D WOLFSPEED | Alldatasheet

Document overview

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Technical content

Features

  • C3M SiC MOSFET technology
  • High blocking voltage with low On-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant Benefits
  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency

Applications

  • Renewable energy
  • EV battery chargers
  • High voltage DC/DC converters
  • Switch Mode Power Supplies
  • Lighting Package Part Number Package Marking C3M0120090D TO-247-3 C3M0120090 VDS 900 V I D @ 25˚C 23 A RDS(on) 120 mΩ Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note VDSmax Drain - Source Voltage 900 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note: 1 VGSop Gate - Source Voltage (static) -4/+15 V Static Note: 2 ID Continuous Drain Current A VGS = 15 V, TC = 25˚C Fig. 19

15 VGS = 15 V, TC = 100˚C

ID(pulse) Pulsed Drain Current 50 A Pulse width tP limited by Tjmax Fig. 22 PD Power Dissipation 97 W TC=25˚C, TJ = 150 ˚C Fig. 20 TJ , Tstg Operating Junction and Storage Temperature -55 to +150 ˚C TL Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s Md Mounting Torque 1 8.8 Nm lbf-in M3 or 6-32 screw Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V

C3M0120090D Rev. 2, 10-2020 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 900 V VGS = 0 V, ID = 100 μA VGS(th) Gate Threshold Voltage 1.8 2.1 3.5 V VDS = VGS, ID = 3 mA Fig. 11

1.6 V VDS = VGS, ID = 3 mA, TJ = 150ºC

IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 900 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance 120 155 mΩ VGS = 15 V, ID = 15 A Fig. 4, 5, 6170 VGS = 15 V, ID = 15 A, TJ = 150ºC gfs Transconductance 8.9 S VDS= 20 V, IDS= 15 A Fig. 7

7.1 VDS= 20 V, IDS= 15 A, TJ = 150ºC

Ciss Input Capacitance 414 pF VGS = 0 V, VDS = 600 V f = 1 MHz VAC = 25 mV Fig. 17, 18Coss Output Capacitance 48 Crss Reverse Transfer Capacitance 3 Eoss Coss Stored Energy 10.6 μJ Fig. 16 EON Turn-On Switching Energy (Body Diode FWD) 176 μJ VDS = 400 V, VGS = -4 V/15 V, ID = 15 A, RG(ext) = 2.5Ω, L= 99 μH, TJ = 150ºC Fig. 26, 29EOFF Turn Off Switching Energy (Body Diode FWD) 36 td(on) Turn-On Delay Time 6 ns VDD = 400 V, VGS = -4 V/15 V ID = 15 A, RG(ext) = 2.5 Ω, Timing relative to VDS Inductive load Fig. 27, tr Rise Time 32 td(off) Turn-Off Delay Time 14 tf Fall Time 7 RG(int) Internal Gate Resistance 13 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 5 nC VDS = 400 V, VGS = -4 V/15 V ID = 15 A Per IEC60747-8-4 pg 21 Fig. 12Qgd Gate to Drain Charge 8 Qg Total Gate Charge 21 Reverse Diode Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Typ. Max. Unit Test Conditions Note VSD Diode Forward Voltage 4.8 V VGS = -4 V, ISD = 7.5 A Fig. 8, 9, 104.4 V VGS = -4 V, ISD = 7.5 A, TJ = 150 °C IS Continuous Diode Forward Current 15 A VGS = -4 V Note 1 IS, pulse Diode pulse Current 50 A VGS = -4 V, pulse width tP limited by Tjmax Note 1 trr Reverse Recover time 28 ns VGS = -4 V, ISD = 15 A, VR = 400 V dif/dt = 600 A/µs, TJ = 150 °C Note 1Qrr Reverse Recovery Charge 127 nC Irrm Peak Reverse Recovery Current 6 A Thermal Characteristics Symbol Parameter Max. Unit Test Conditions Note RθJC Thermal Resistance from Junction to Case 1.3 °C/W Fig. 21 RθJA Thermal Resistance From Junction to Ambient 40 Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode

Figure 22. Safe Operating AreaFigure 21. Transient Thermal Impedance Figure 23. Clamped Inductive Switching Energy vs. Figure 24. Clamped Inductive Switching Energy vs. Figure 19. Continuous Drain Current Derating vs. Figure 20. Maximum Power Dissipation Derating vs.

0.01 SinglePulse

Figure 29. Clamped Inductive Switching Test Circuit Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.

C3M0120090D Rev. 2, 10-2020 Package Dimensions Package TO-247-3 Recommended Solder Pad Layout TO-247-3 POS Inches Millimeters Min Max Min Max A .190 .205 4.83 5.21 A1 .090 .100 2.29 2.54 A2 .075 .085 1.91 2.16 b .042 .052 1.07 1.33 b1 .075 .095 1.91 2.41 b2 .075 .085 1.91 2.16 b3 .113 .133 2.87 3.38 b4 .113 .123 2.87 3.13 c .022 .027 0.55 0.68 D .819 .831 20.80 21.10 D1 .640 .695 16.25 17.65 D2 .037 .049 0.95 1.25 E .620 .635 15.75 16.13 E1 .516 .557 13.10 14.15 E2 .145 .201 3.68 5.10 E3 .039 .075 1.00 1.90 E4 .487 .529 12.38 13.43 e .214 BSC 5.44 BSC N 3 3 L .780 .800 19.81 20.32 L1 .161 .173 4.10 4.40 ØP .138 .144 3.51 3.65 Q .216 .236 5.49 6.00 S .238 .248 6.04 6.30 T 9˚ 11˚ 9˚ 11˚ U 9˚ 11˚ 9˚ 11˚ V 2˚ 8˚ 2˚ 8˚ W 2˚ 8˚ 2˚ 8˚ Pinout Information:

  • Pin 1 = Gate
  • Pin 2, 4 = Drain
  • Pin 3 = Source T U WV NOTE ; 1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT 2. DIMENSIONING & TOLERANCEING CONFIRM TO ASME Y14.5M-1994. 3. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. 4. THIS DRAWING WILL MEET ALL DIMENSIONS REQUIREMENT OF JEDEC outlines TO-247 AD. 1 - GATE 2 - DRAIN (COLLECTOR) 3 - SOURCE (EMITTER) 4 - DRAIN (COLLECTOR) TITLE: SHEET COMPANY ASE Weihai

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Engineering Weihai, Inc. PACKAGE OUTLINE ISSUE DATE DWG NO. 98WHP03165A O Sep.05, 2016 TO-247 3LD, Only For Cree A b c D E e N L P Q S T W X 4.83 5.21 .190 .205 2.29 2.54 .090 .100 1.91 2.16 .075 .085 1.07 1.33 .042 .052 1.91 2.41 .075 .095 2.87 3.38 .113 .133 0.55 0.68 .022 .027 20.80 21.10 .819 .831 16.25 17.65 .640 .695 0.95 1.25 .037 .049 15.75 16.13 .620 .635 13.10 14.15 .516 .557 3.68 5.10 .145 .201 1.00 1.90 .039 .075 12.38 13.43 .487 .529 5.44 BSC .214 BSC 19.81 20.32 .780 .800 4.10 4.40 .161 .173 3.51 3.65 .138 .144 5.49 6.00 .216 .236 6.04 6.30 .238 .248 TITLE: SHEET COMPANY ASE Weihai

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Engineering Weihai, Inc. PACKAGE OUTLINE ISSUE DATE DWG NO. 98WHP03165A O Sep.05, 2016 TO-247 3LD, Only For Cree

C3M0120090D Rev. 2, 10-2020 Copyright © 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power

  • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
  • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen- tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Notes Related Links
  • C2M PSPICE Models: http:/ /wolfspeed.com/power/tools-and-support
  • SiC MOSFET Isolated Gate Driver reference design: http:/ /wolfspeed.com/power/tools-and-support
  • SiC MOSFET Evaluation Board: http:/ /wolfspeed.com/power/tools-and-support