WAB300M12BM3

WAB300M12BM3 WOLFSPEED | Alldatasheet

Document overview

• Manufacturer or author: Daniel Martin
• PDF pages: 12

Technical content

Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. A, 2020-05-20 WAB300M12BM3 4600 Silicon Dr., Durham, NC 27703 WAB300M12BM3

1200 V, 300 A All-Silicon Carbide

THB-80 Qualified, Switching Optimized, Half-Bridge Module Technical Features

• Industry Standard 62 mm Footprint
• High Humidity Operation THB-80 (HV-H3TRB)
• High Junction Temperat ure (175 °C) Operation
• Implements Switching Optimized Thir d Generation SiC MOSFET Technology
• Low Inductanc e (10.2 nH) Design
• Silicon Nitride Insulator and Copper Baseplat e VDS 1200 V IDS 300 A System Benefits
• Fast Time-to-Market with Minimal Development Required for Transition from 62mm Si IGBT Packages
• Increased Syst em Efficiency, due to Low Switching & Conduction Losses of SiC
• High Reliability Material Selection

Applications

• Railway & Traction
• Solar
• EV Charger s
• Industrial Automation & T esting Package 105mm x 61.5 mm x 31.4 mm Key Parameters (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note VDS max Drain-Source Voltage 1200 VVGS max Gate-Source Voltage, Maximum Value -8 +19 Transient, <100 ns Fig. 32 VGS op Gate-Source Voltage, Recommended Op. Value -4 +15 Static I DS DC Continuous Drain Current 382 A VGS = 15 V, TC = 25 ˚C, TVJ ≤ 175 ˚C Fig. 20

270 VGS = 15 V, TC = 90 ˚C, TVJ ≤ 175 ˚C Note 1

ISD DC Source-Drain Current 382 VGS = 15 V, TC = 25 ˚C, TVJ ≤ 175 ˚C ISD BD DC Source-Drain Current (Body Diode) 190 VGS = - 4 V, TC = 25 ˚C, TVJ ≤ 175 ˚C IDS (pulsed) Maximum Pulsed Drain-Source Current 600 tPmax limited by Tjmax VGS = 15 V, TC = 25 ˚CISD (pulsed) Maximum Pulsed Source-Drain Current 600 TVJ op Maximum Virtual Junction Temperature under Switching Conditions -40 175 °C Note 1 Assumes RTH JC = 0.16 °W and RDS(on) = 6.4 mΩ. Calculate PD = (TVJ – TC) / RTH JC. Calculate ID_MAX = √(PD / RDS(on)) Mid

Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. A, 2020-05-20 WAB300M12BM3 4600 Silicon Dr., Durham, NC 27703 MOSFET Characteristics (Per Position) (TVJ = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, TVJ = -40 °C VGS(th) Gate Threshold Voltage 1.8 2.5 3.6 V DS = VGS, ID = 92 mA

2.0 VDS = VGS, ID = 92 mA, TVJ= 175 °C

IDSS Zero Gate Voltage Drain Current 10 150 μA VGS = 0 V, VDS = 1200 V IGSS Gate-Source Leakage Current 0.05 1 V GS = 15 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance (Devices Only) 4.0 5.2 mΩ VGS = 15 V, ID = 300 A Fig. 2 Fig. 36.4 V GS = 15 V, ID = 300 A, TVJ = 175 °C gfs Transconductance 212 S VDS= 20 V, IDS= 300 A Fig. 4

200 VDS= 20 V, IDS= 300 A, TVJ = 175 °C

Turn-On Switching Energy, TJ = 25 °C TJ = 125 °C TJ = 175 °C 4.75 5.33 5.88 mJ V DS = 600 V, ID = 300A, VGS = -4 V/15 V, RG(ext) = 2.0 Ω, L= 20.7 μH Fig. 11 Fig. 13 E Off Turn-Off Switching Energy, TJ = 25 °C TJ = 125 °C TJ = 175 °C 4.99 5.23 5.30 R G(int) Internal Gate Resistance 1.4 Ω T VJ = 25 °C Ciss Input Capacitance 24.5 nF VGS = 0 V, VDS = 1000 V, VAC = 25 mV, f = 100 kHz Fig. 9Coss Output Capacitance 0.97 Crss Reverse Transfer Capacitance 50 pF QGS Gate to Source Charge 256 nC VDS = 800 V, VGS = -4 V/15 V ID = 400 A Per IEC60747-8-4 pg 21 QGD Gate to Drain Charge 308 QG Total Gate Charge 908 Rth JC FET Thermal Resistance, Junction to Case 0.16 0.18 °C/W Fig. 17 Body Diode Characteristics (Per Position) (TVJ = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note VSD Body Diode Forward Voltage 6.0 V VGS = -4 V, ISD = 300 A Fig. 7

5.5 VGS = -4 V, ISD = 300 A, TJ = 175 °C

tRR Reverse Recovery Time 36.5 ns VGS = -4 V, ISD = 300 A, VR = 600 V diF /dt = 14.5 A/ns, TJ = 175 °CQRR Reverse Recovery Charge 7.3 μC IRRM Peak Reverse Recovery Current 323 A ERR Reverse Recovery Energy TJ = 25 °C TJ = 125 °C TJ = 175 °C 0.65 1.98 3.01 mJ V DS = 600 V, ID = 300A, VGS = -4 V/15 V, RG(ext) = 2.0 Ω, L= 20.7 μH Fig. 14

Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. A, 2020-05-20 WAB300M12BM3 4600 Silicon Dr., Durham, NC 27703 Module Physical Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions mΩ TC = 125 °C, Note12 LStray Stray Inductance 10.2 nH Between Terminals 2 and 3 TC Case Temperature -40 125 °C W Weight 300 g MS Mounting Torque 4.5 5 5.5 N-m Baseplate, M6 bolts 4.5 5 5.5 Power Terminals, M6 bolts Visol Case Isolation Voltage 5.5 kV AC, 50 Hz, 1 min CTI Comparative Tracking Index 600 Note12 Total Effective Resistance (Per Switch Position) = MOSFET RDS(on) + Switch Position Package Resistance.

Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. A, 2020-05-20 WAB300M12BM3 4600 Silicon Dr., Durham, NC 27703 Schematic and Pin Out Package Dimensions (mm)

Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. A, 2020-05-20 WAB300M12BM3 4600 Silicon Dr., Durham, NC 27703 3D Model (Requires Adobe Acrobat or Compatible Viewer With 3D Capability)

Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. A, 2020-05-20 WAB300M12BM3 4600 Silicon Dr., Durham, NC 27703 Supporting Links & Tools

• CGD1200HB2P-BM3 Evaluation Gate Driver
• CGD12HB00D: Differ ential Transceiver Board
• KIT-CRD-CIL12N-BM: Dynamic Perf ormance Evaluation Board for the BM2 & BM3 Module (CPWR-AN-36)
• CPWR-AN-34: Module Mounting Application Not e
• CPWR-AN-35: Thermal Interf ace Material Application Note Notes
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which f ailure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. The SiC MOSFET module switches at speeds beyond what is cust omarily associated with IGBT-based modules. Therefore, special precautions are required to realize optimal performance. The interconnection between the gate driver and module housing needs to be as short as possible. This will afford optimal switching time and avoid the potential for device oscillation. Also, great care is required to insure minimum inductance between the module and DC link capacitors to avoid excessive VDS overshoot.