VP0610T

TP0610L VISHAY | Alldatasheet

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TP0610L/T, VP0610L/T, BS250 Vishay Siliconix Document Number: 70209 S-41260—Rev. H, 05-Jul-04 www.vishay.com P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (/C0087) VGS(th) (V) ID (A) TP0610L −60 10 @ VGS = −10 V −1 to −2.4 −0.18 TP0610T −60 10 @ VGS = −10 V −1 to −2.4 −0.12 VP0610L −60 10 @ VGS = −10 V −1 to −3.5 −0.18 VP0610T −60 10 @ VGS = −10 V −1 to −3.5 −0.12 BS250 −45 14 @ VGS = −10 V −1 to −3.5 −0.18 FEATURES BENEFITS APPLICATIONS /C0068High-Side Switching /C0068Low On-Resistance: 8 /C0087 /C0068Low Threshold: −1.9 V /C0068Fast Switching Speed: 16 ns /C0068Low Input Capacitance: 15 pF /C0068Ease in Driving Switches /C0068Low Offset (Error) Voltage /C0068Low-Voltage Operation /C0068High-Speed Switching /C0068Easily Driven Without Buffer /C0068Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. /C0068Battery Operated Systems /C0068Power Supply, Converter Circuits /C0068Motor Control TP0610T VP0610T TO-226AA (TO-92) Top View S D G 2 TO-92-18RM (TO-18 Lead Form) Top View D S G G S D Top View TO-236 (SOT-23) BS250TP0610L VP0610L Device Marking Front View “S” TP 0610L xxll Device Marking Front View “S” VP 0610L xxll “S” = Siliconix Logo xxll = Date Code TP0610L VP0610L Device Marking Front View “S” BS 250 xxll “S” = Siliconix Logo xxll = Date Code BS250 Marking Code: TP0610T : TOwll VP0610T: VOwll w = Week Code lL = Lot Traceability ABSOLUTE MAXIMUM RATINGS (TA = 25/C0095C UNLESS OTHERWISE NOTED) Parameter Symbol TP0610L TP0610T VP0610L VP0610T BS250 Unit Drain-Source Voltage VDS −60 −60 −60 −60 −45 V Gate-Source Voltage VGS /C003430 /C003430 /C003430 /C003430 /C003425 V Continuous Drain Current TA= 25/C0095C ID (TJ = 150/C0095C) TA= 100/C0095C ID −0.11 −0.07 −0.11 −0.07 A Pulsed Drain Currenta IDM −0.8 −0.4 −0.8 −0.4 Power Dissipation TA= 25/C0095C PD WPower Dissipation TA= 100/C0095C PD 0.32 0.14 0.32 0.14 W Thermal Resistance, Junction-to-Ambient RthJA 156 350 156 350 150 /C0095C/W Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 /C0095C Notes a. Pulse width limited by maximum junction temperature. For applications information see AN804.

TP0610L/T, VP0610L/T, BS250 Vishay Siliconix www.vishay.com Document Number: 70209 S-41260—Rev. H, 05-Jul-04 SPECIFICATIONS (TA = 25/C0095C UNLESS OTHERWISE NOTED) Limits TP0610L/T VP0610L/T BS250 Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit Static Drain-Source V(BR)DSS VGS = 0 V, ID = −10 /C0109A −70 −60 −60Drain Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −100 /C0109A −45 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = −1 mA −1.9 −1 −2.4 −1 −3.5 −1 −3.5 V VDS = 0 V, VGS = /C003420 V /C003410 /C003410 Gate-Body Leakage IGSS VDS = 0 V, VGS = /C003420 V, TJ = 125/C0095C /C003450 nAyg GSS VDS = 0 V, VGS = /C003415 V /C003420 G VDS = −48 V, VGS = 0 V −1 −1 Zero Gate Voltage Drain Current IDSS VDS = −48 V, VGS = 0 V, TJ = 125/C0095C −200 −200 /C0109ADrain Current DSS VDS = −25 V, VGS = 0 V −0.5 /C0109 OS VDS = −10 V, VGS = −4.5 V −180 −50 On-State Drain Currentb ID(on) VDS = 10 V VGS = 10 V L Suffix −750 −600 mACurrentb D(on) VDS = −10 V, VGS = −10 V T Suffix −220 VGS = −4.5 V, ID = −25 mA 11 25 Drain-Source rDS( ) VGS = −10 V, ID = −0.5 A L Suffix 8 10 10 /C0087Drain-Source On-Resistanceb rDS(on) VGS = −10 V, ID = −0.5 A, TJ = 125/C0095C L Suffix 15 20 20 /C0087 VGS = −10 V, ID = −0.2 A T Suffix 6.5 10 10 14 Forward gf VDS = −10 V, ID = −0.5 A L Suffix 20 80 mSForward Transconductanceb gfs VDS = −10 V, ID = −0.1 A T Suffix 90 60 70 mS Diode Forward Voltage VSD IS = −0.5 A, VGS = 0 V −1.1 V Dynamic Input Capacitance Ciss 15 60 60 Output Capacitance Coss VDS = −25 V, VGS = 0 V f = 1 MHz 10 25 25 pF Reverse Transfer Capacitance Crss f = 1 MHz 3 5 5 pF Switchingc Turn-On Time tON VDD = −25 V, RL = 133 /C0087 8 10 ns Turn-Off Time tOFF VDD = 25 V, RL = 133 /C0087 ID /C0094 −0.18 A, VGEN = −10 V, Rg = 25 /C0087 8 10 ns Notes a. For DESIGN AID ONLY, not subject to production testing. VPDS06 b. Pulse test: PW /C0118300 /C0109s duty cycle /C01182%. c. Switching time is essentially independent of operating temperature.

TP0610L/T, VP0610L/T, BS250 Vishay Siliconix Document Number: 70209 S-41260—Rev. H, 05-Jul-04 www.vishay.com TYPICAL CHARACTERISTICS (25/C0095C UNLESS NOTED) 300 600 900 1200 02468 1 0 0.0 0.2 0.4 0.6 0.8 1.0 012345 Output Characteristics Transfer Characteristics VDS − Drain-to-Source Voltage (V) − Drain Current (A)I D VGS = 10 V 5 V 4 V VGS − Gate-to-Source Voltage (V) − Drain Current (mA)I D TJ = −55/C0095C 125/C0095C 25/C0095C 0.0 0.3 0.6 0.9 1.2 1.5 1.8 −50 −25 0 25 50 75 100 125 150 On-Resistance vs. Junction Temperature TJ − Junction Temperature (/C0095C) VGS = 10 V @ 500 mA VGS = 4.5 V @ 25 mA ID = 500 mA Gate Charge − Gate-to-Source Voltage (V) Qg − Total Gate Charge (nC) V GS 0 200 400 600 800 1000 On-Resistance vs. Drain Current ID − Drain Current (mA) VGS = 4.5 V VGS = 10 V − On-Resistance (rDS(on) /C0087) 0 5 10 15 20 25 Capacitance VDS − Drain-to-Source Voltage (V) C − Capacitance (pF) Crss Coss Ciss VGS = 0 V 6 V 7 V VGS = 5 V VDS = 30 V VDS = 48 V 8 V rDS(on) − On-Resiistance (Normalized)

TP0610L/T, VP0610L/T, BS250 Vishay Siliconix www.vishay.com Document Number: 70209 S-41260—Rev. H, 05-Jul-04 TYPICAL CHARACTERISTICS (25/C0095C UNLESS NOTED) 02468 1 0 On-Resistance vs. Gate-Source Voltage VGS − Gate-to-Source Voltage (V) ID = 500 mA ID = 200 mA − On-Resistance (rDS(on) /C0087) 1.2 1.5 100 1000 0.00 0.3 0.6 0.9 TJ = 25/C0095C TJ = 125/C0095C Source-Drain Diode Forward Voltage VSD − Source-to-Drain Voltage (V) − Source Current (A)I S TJ = −55/C0095C VGS = 0 V Threshold Voltage Variance Over Temperature Variance (V)VGS(th) −0.3 −0.2 −0.1 −0.0 0.1 0.2 0.3 0.4 0.5 −50 −25 0 25 50 75 100 125 150 ID = 250 /C0109A TJ − Junction Temperature (/C0095C) 10−3 10−2 1 10 60010−110−4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 350/C0095C/W 3. TJM − TA = PDMZthJA(t) Notes: 4. Surface Mounted PDM 0.01 2.5 100 6000.1 Power (W) Single Pulse Power, Junction-to-Ambient Time (sec) 1.5 0.5 TA = 25/C0095C