EGP30A_V01 VISHAY | Alldatasheet
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EGP30A, EGP30B, EGP30C, EGP30D, EGP30F, EGP30G www.vishay.com Vishay General Semiconductor Revision: 13-Jun-16 1 Document Number: 88584 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Glass Passivated Ultrafast Plastic Rectifier
FEATURES
- Superectifier structure for high reliability condition
- Cavity-free glass-passivated junction
- Ultrafast reverse recovery time
- Low forward voltage drop
- Low leakage current
- Low switching losses, high efficiency
- High forward surge capability
- Solder dip 275 °C max. 10 s, per JESD 22-B106
- Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication. MECHANICAL DATA Case: GP20, molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 50 V, 100 V, 150 V, 200 V, 300 V, 400 V IFSM 125 A trr 50 ns VF 0.95 V, 1.25 V TJ max. 150 °C Diode variations Single die GP20 SUPERECTIFIER® MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL EGP30A EGP30B EGP30C EGP30D EGP30F EGP30G UNIT Maximum repetitive peak reverse voltage V RRM 50 100 150 200 300 400 V Maximum RMS voltage V RMS 35 70 105 140 210 280 V Maximum DC blocking voltage V DC 50 100 150 200 300 400 V Maximum average forward rectified current 0.375" (9.5 mm) lead length at TA = 55 °C IF(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load I FSM 125 A Operating and storage temperature range T J, TSTG -65 to +150 °C
EGP30A, EGP30B, EGP30C, EGP30D, EGP30F, EGP30G www.vishay.com Vishay General Semiconductor Revision: 13-Jun-16 2 Document Number: 88584 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, PCB mounted RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repe titive Peak Forward Surge Current ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL EGP30A EGP30B EGP30C EGP30D EGP30F EGP30G UNIT Maximum instantaneous forward voltage 3.0 A V F 0.95 1.25 V Maximum DC reverse current at rated DC blocking voltage TA = 25 °C IR 5.0 μA TA = 125 °C 100 Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 50 ns Typical junction capacitance 4.0 V, 1 MHz C J 85 75 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL EGP30A EGP30B EGP30C EGP30D EGP30F EGP30G UNIT Typical thermal resistance R JA (1) 20 °C/WRJL (1) 8.0 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g ) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE EGP30G-E3/54 1.01 54 1400 13" diam eter paper tape and reel EGP30G-E3/73 1.01 73 1000 Ammo pack packaging 2.0 3.0 1.0 25 50 75 100 125 150 175 Average Forwar d Rectified Current (A) Ambient Temperature (°C) Resistive or Inductive Load 0.375" (9.5 mm) Lead Length 1 10 100 100 125 150 175 Number of Cycles at 60 Hz Peak Forwar d Surge Current (A) TJ = TJ Max. 8.3 ms Single Half Sine-Wave
EGP30A, EGP30B, EGP30C, EGP30D, EGP30F, EGP30G www.vishay.com Vishay General Semiconductor Revision: 13-Jun-16 3 Document Number: 88584 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Leakage Characteristics Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.01 0.1 100 Instantaneous Forward Voltage (V) In stantaneou s Forward Current (A) TJ = 150 °C TJ = 25 °C Pulse Width = 300 μs 1 % Duty Cycle EGP30A thru EGP30D EGP30F and EGP30G 0 20 40 60 80 0.001 0.01 0.1 100 100 Percent of Rated Peak Reverse Voltage (%) In stantaneou s Rever se Leakage Current (μA) TJ = 150 °C TJ = 125 °C TJ = 25 °C TJ = 75 °C 120 150 180 210 1 10 100 1000 Reverse Voltage (V) Junction Capacitanc e (pF) TJ = 25 °C f = 1.0 MHz V sig = 50 mVp-p EGP30A thru EGP30D EGP30F and EGP30G 0.01 0.1 1 10 100 0.1 100 t - Pulse Duration (s) Tran sient Thermal Impedance (°C/W) GP20 1.0 (25.4) MIN. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.042 (1.07) 0.037 (0.94) DIA.
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