VHB50-28F ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982 - 1200 • FAX (818) 765 - 3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS T C = 25 O C SYMBOL NONE TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CEO IC = 200 mA 35 V BV CES IC = 200 mA 65 V BV EBO IE = 1 0 mA 4.0 V ICBO V CB = 30 V 2.0 mA ICES V CE = 30 V T C = 125 O C 10 mA h FE V CE = 5.0 V I C = 500 mA 5.0 --- --- C ob V CB = 28 V f = 1.0 MHz 80 pF f T V CE = 10 V I C = 500 mA f = 100 MHz 200 MHz P G ηηC V CE = 28 V P OUT =50 W f = 175 MHz 6.0 dB NPN SILICON RF POWER TRANSISTOR VHB50 - 28F DESCRIPTION: The ASI VHB50 - 28F is Designed for FEATURES:

  • Omnigold ™ Metalization System MAXIMUM RATINGS IC 6.5 A V CBO 65 V V CEO 35 V V EBO 4.0 V P DISS 75W T J - 65 O C to +200 O C T STG - 65 O C to +150 O C θθJC 2.3 O C/W PACKAGE STYLE .380 4L FLG ORDER CODE: ASI10728 MINIMUM inches / mm .970 / 24.64 B C D E F G A MAXIMUM .385 / 9.78 .980 / 24.89 inches / mm H .160 / 4.06 .180 / 4.57 DIM I J .240 / 6.10 .255 / 6.48 .785 / 19.94 F B G .125 Ø.125 NOM. FULL R D E C H .112 x 45° A I J .280 / 7.11 .720 / 18.29 .730 / 18.54