5919CC-TB-7

HVV1011-600 ASI | Alldatasheet

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H Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant High voltage vertical technology is well suited for high power pulsed applications in the L-Band including IFF, TCAS and Mode-S applications. Table 1: Typical RF Performance in broadband text fixture at 25°Ctemperature with RF pulse conditions of pulse width = 50 s and pulse duty cycle = 2%. The high power HVV1011-600 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1030MHz to 1090MHz. The high voltage HVVFET technology produces over 600W of pulsed output power while offering high gain, high efficiency, and ease of matching with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power. Device Part Number: HVV1011-600 Evaluation Kit Part Number: HVV1011-600-EK

ORDERING INFORMATION

DESCRIPTION

FEATURES

REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 WWW.ADSEMI.COM Specifications are subject to change without notice. GEPACKAGE

HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS15A 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 07/15/2010 Phoenix, Az. 85044 © 2009 HVVi Semiconductors, Inc. All Rights Reserved. 2 H V V1011-600 High Voltage, High Ruggedness L-BanduHighuPoweruPulseduTransistor 1030/1090uMHz,u50µsuPulse,u2%uDutyu ForuTCAS,uIF FuanduMode-SuApplicationsu The innovative Semiconductor Company! The HVV1011 -600 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power and nominal operating voltage across the frequency band of operation. Typical performance at 1030 MHz at an input power of 12W. K97:! L@! LJM@ TSJF! T&)R! S1D$),4N! J&'+*)04+!

ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATING (IEC 134) THERMAL/RUGGEDNESS PERFORMANCE

HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS15A 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 07/15/2010 Phoenix, Az. 85044 © 2009 HVVi Semiconductors, Inc. All Rights Reserved. 3 H V V1011-600 High Voltage, High Ruggedness L-BanduHighuPoweruPulseduTransistor 1030/1090uMHz,u50µsuPulse,u2%uDutyu ForuTCAS,uIF FuanduMode-SuApplicationsu The innovative Semiconductor Company! Notes: 1) Rated at TCASE = 25°C 2) All parameters measured under pulsed conditions at 12W input power measured at the 10% point of the pulse with pulse width = 50µsec, duty cycle = 2% and VDD = 50V, IDQ = 100mA in a broadband matched test fixture. 3) Amount of gate voltage required to attain nominal quiescent current. 4) Guaranteed by design. PULSE CHARACTERISTICS

HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS15A 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 07/15/2010 Phoenix, Az. 85044 © 2009 HVVi Semiconductors, Inc. All Rights Reserved. 4 H V V1011-600 High Voltage, High Ruggedness L-BanduHighuPoweruPulseduTransistor 1030/1090uMHz,u50µsuPulse,u2%uDutyu ForuTCAS,uIF FuanduMode-SuApplicationsu The innovative Semiconductor Company! Typical device performance under Class AB mode of operation and RF pulse conditions of 50µs pulse width and 2% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at 1090MHz. Typical device performance under Class AB mode of operation and RF pulse conditions of 50 µs pulse width and 2% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at 1090MHz.

HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS15A 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 07/15/2010 Phoenix, Az. 85044 © 2009 HVVi Semiconductors, Inc. All Rights Reserved. 5 H V V1011-600 High Voltage, High Ruggedness L-BanduHighuPoweruPulseduTransistor 1030/1090uMHz,u50µsuPulse,u2%uDutyu ForuTCAS,uIF FuanduMode-SuApplicationsu The innovative Semiconductor Company! Typical device performance under Class AB mode of operation and RF pulse conditions of 50µs pulse width and 2% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at an input power of 12W. Typical device performance under Class AB mode of operation and RF pulse conditions of 50µs pulse width and 2% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at an input power of 12W.

HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS15A 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 07/15/2010 Phoenix, Az. 85044 © 2009 HVVi Semiconductors, Inc. All Rights Reserved. 6 H V V1011-600 High Voltage, High Ruggedness L-BanduHighuPoweruPulseduTransistor 1030/1090uMHz,u50µsuPulse,u2%uDutyu ForuTCAS,uIF FuanduMode-SuApplicationsu The innovative Semiconductor Company! Typical device performance under Class AB mode of operation at 1090MHz and RF pulse conditions of 50µs pulse width and 2% duty cycle with VDD = 50V and IDQ = 100mA. The high voltage silicon vertical technology shows less than 2dB of power degradation over an extreme case teperature rise of 125°C. Measured at P1dB Compression Point TEMP Gain (dB) Power (W) Power (dBm) -40C 18.7 787 59.0 0C 17.9 802 59.0 25C 17.4 733 58.7 85C 16.6 580 57.6

HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS15A 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 07/15/2010 Phoenix, Az. 85044 © 2009 HVVi Semiconductors, Inc. All Rights Reserved. 7 H V V1011-600 High Voltage, High Ruggedness L-BanduHighuPoweruPulseduTransistor 1030/1090uMHz,u50µsuPulse,u2%uDutyu ForuTCAS,uIF FuanduMode-SuApplicationsu The innovative Semiconductor Company! Frequency Zin* (ohms) Zout* (ohms) 1030MHz 0.95-j1.35 1.1-j2.7 1090MHz 1.0-j1.0 1.0-j2.3 Zin* Zout* Output Impedance Matching Network Input Impedance Matching Network T est Circuit Impedances

B#8WdZ >_]^ Fem[h Fkbi[Z JhWdi_ijeh Part Description Part Number Manufacturer C1, C2: 39 pF AVX 805 Chip Capacitor 712-1388-1-ND Digi Key C3,C7: 39 pF ATC 1210 100B Chip Capacitor 478-2646-1-ND Digi Key C4: 1K pF 100V Chip Capacitor (X7R 1206) 399-1222-2-ND Digi Key C5, C8: 10K pF 100V Chip Capacitor (X7R 1206) 399-1236-2-ND Digi Key C6: 10 uF 6V Tantalum SMD 478-3134-1-ND Digi Key C9, C10: 220 uF 63V Elect FK SMD PCE3484TR-ND Digi Key R1: 470 Ohms Chip Resistor (1206) 311-470ERCT-ND Digi Key R2: 100 K Ohms Chip Resistor (1206) 311-100KERCT-ND Digi Key RF Connectors Type "N" RF connectors 5919CC-TB-7 Coaxicom DC Drain Conn Connector Jack Banana Nylon Red J151-ND DIGI-KEY DC Ground Conn.Connector Jack Banana Nylon Black J152-ND DIGI-KEY DC Gate Conn. Connector Jack Banana Nylon Green J153-ND DIGI-KEY PCB Board PCB: 25 mils thick, 10.2 Dielectric, 1 oz Copper DS Electronics Device Clamp HV800 Package Nylon Clamp Foot FXT000116 Cool Innovation Heat Sink Cool Innovations Aluminum Heat Sink 3-252510RS3411 Cool Innovation S.S. Screws (4) 4-40 X 1/4 Stainless Steel Socket Hex Head P242393 Copper State Bolt Alloy Screws (4) 4-40 X 1/2 Alloy Socket Cap screw Hex HeadSCAS-0440-08C Small Parts Inc Metal Washer (6) #4 Washer Zinc PLTD Steel Lock ZSLW-004-M Small Parts Inc Alloy Screws (2) 4-40 X 3/4 Alloy Socket Cap Screw Head SCAS-0440-12M Small Parts Inc Demonstration Board Outline Demonstration Circuit Board Picture HVV1011-600 Demonstration Circuit Board Bill of Materials

Note: Drawing is not actual size. SOURCE GATE DRAIN ASI PART NUMBER JDATE CODE inches mm ASI Semiconductor, Inc. (ASI) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, ASI does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability no liability for conse- -quences resulting from the use of such information. No license, either expressed or implied, is conveyed under any ASI intellectual property rights, including any patent rights.