MSC81090 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 45 V BVCER IC = 5.0 mA R BE = 10 Ω 45 V BVEBO IE = 1.0 mA 3.5 V ICBO VCB = 28 V 0.5 mA hFE VCE = 5.0 V IC = 100 mA 15 120 --- Cob VCB = 18 V f = 1.0 MHz 3.2 pF POUT ηC GP VCE = 18 V P IN = 0.2 W f = 1.0 GHz 2.0 2.2 10.4 W dB NPN SILICON RF POWER TRANSISTOR MSC81090 DESCRIPTION: The ASI MSC81090 is Designed for General Purpose Class A Power Amplifier Applications from 0.4 - 1.2 GHz. FEATURES:

  • PG = 10 dB min. at 2.0 W/ 1.0 GHz
  • Hermetically sealed Package
  • Omnigold™ Metalization System
  • Emitter Ballasted MAXIMUM RATINGS IC 200 A VCC 35 V PDISS 6.25 W @ TC ≤ 75 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 20 °C/W PACKAGE STYLE .230 4L STUD COMMON EMITTER