VHB25-12S_07 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/2
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 18 V BVCES IC = 15 mA 36 V BVEBO IE = 5.0 mA 4.0 V ICBO VCB = 28 V 5.0 mA hFE VCE = 5.0 V IC = 250 mA 20 --- --- COB VCB = 12.5 V f = 1.0 MHz 110 pF PG ηηηηC VCE = 12.5 V P OUT = 25 W f = 175 MHz 10 dB NPN SILICON RF POWER TRANSISTOR VHB25-12S DESCRIPTION: The ASI VHB25-12S is Designed for Class C, 12.5 V High Band Applications up to 175 MHz. FEATURES:
- Common Emitter
- PG = 10 dB at 25 W/175 MHz
- Omnigold™ Metalization System MAXIMUM RATINGS IC 4.0 A VCBO 36 V VCEO 18 V VEBO 4.0 V PDISS 65 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθJC 3.5 °C/W PACKAGE STYLE .380 4L STUD ORDER CODE: ASI10715 MINIMUM inches / mm .004 / 0.10 .370 / 9.40 .320 / 8.13 B C D E F G A MAXIMUM .385 / 9.78 .330 / 8.38 .130 / 3.30 .007 / 0.18 inches / mm H .090 / 2.29 .100 / 2.54 DIM .490 / 12.45.450 / 11.43 I J .750 / 19.05 .980 / 24.89 .100 / 2.54 E F D ØC B .112x45° G H J I A #8-32 UNC-2A C B E E
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 2/2
ERROR! REFERENCE SOURCE NOT FOUND. VHB25-12S Specifications are subject to change without notice. IMPEDANCE DATA POUT = 25 W VCE = 12.5 V FREQ ZIN (Ω ) Z CL (Ω ) 135 MHz 0.9 – J0.5 2.2 + J0.8 150 MHz 0.9 + J0.3 2.1 + J0.9 175 MHz 1.0 + J0.4 1.8 + J1.1 MINIMUM inches / mm .004 / 0.10 .370 / 9.40 .320 / 8.13 B C D E F G A MAXIMUM .385 / 9.78 .330 / 8.38 .130 / 3.30 .007 / 0.18 inches / mm H .090 / 2.29 .100 / 2.54 DIM .490 / 12.45.450 / 11.43 I J .750 / 19.05 .980 / 24.89 .100 / 2.54 E F D ØC B .112x45° G H J I A #8-32 UNC-2A