VHB125-28 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, C A 91605 • (818) 982 - 1200 • FAX (818) 765 - 3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS T C = 25 O C SYMBOL NONE TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CBO IC = 100 mA 65 V BV CES IC = 100 mA 65 V BV CEO IC = 100 mA 35 BV EBO IE = 10 mA 4.0 V ICES V CE = 30 V 15 mA h FE V CE = 5.0 V I C = 5.0 A 20 200 --- C OB V CB = 28 V f = 1.0 MHz 250 pF P G ηηC V CE = 28 V P OUT = 125 W f = 175 MHz 9.0 dB NPN SILICON RF POWER TRANSISTOR VHB125 - 28 DESCRIPTION: The ASI VHB125 - 28 is Designed for FEATURES:

  • Omnigold ™ Metalization System MAXIMUM RATINGS IC 20 A V CBO 65 V V CEO 36 V V CES 65 V V EBO 4.0 V P DISS 270 W @ T C = 25 O C T J - 65 O C to +200 O C T STG - 65 O C to +150 O C θθJC 0.65 O C/W PACKAGE STYLE .500 6L FLG ORDER CODE: ASI10731 MINIMUM inches / mm .490 / 12.45 .210 / 5.33 .003 / 0.08 B C D E F G A MAXIMUM .220 / 5.59 .007 / 0.18 .510 / 12.95 inches / mm .725 / 18.42 H DIM K L I J .970 / 24.64 .980 / 24.89 .170 / 4.32 N M .125 / 3.18 .285 / 7.24 .150 / 3.81 .045 / 1.14 E F .725/18,42 I G J K L M A D C B 2x ØN FULL R H .835 / 21.21 .865 / 21.97