VHB100-12_07 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/2

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 100 mA 18 V BVCES IC = 100 mA 36 V BVCBO IC = 50 mA 36 V BVEBO IE = 10 mA 4.0 V ICES VCE = 12.5 V 15 mA NPN SILICON RF POWER TRANSISTOR VHB100-12 DESCRIPTION: The ASI VHB100-12 is a Class-C, 12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF, FM communication, Diffused ballast resistor gives it high VSWR capability, good gain & efficiency over the 136- 175 MHz band. FEATURES:

  • 175 MHz 12.5 V
  • Internal Input Matching Network
  • PG = 6.0 dB at 100 W/175 MHz
  • Omnigold™ Metalization System
  • Common Emitter configuration MAXIMUM RATINGS IC 20 A VCBO 36 V VCEO 18 V VCES 36 V VEBO 4.0 V PDISS 270 W @ TC = 25 °C TJ -65 °C to +200 ° C TSTG -65 °C to +150 °C θθθθJC 0.65 °C/W PACKAGE STYLE .500 6L FLG 1 = Collecttor 2 = Base 3&4 = Emitter ORDER CODE: ASI10719 MINIMUM inches / mm .490 / 12.45 .210 / 5.33 .003 / 0.08 B C D E F G A MAXIMUM .220 / 5.59 .007 / 0.18 .510 / 12.95 inches / mm .725 / 18.42 H DIM K L I J .970 / 24.64 .980 / 24.89 .170 / 4.32 N M .125 / 3.18 .285 / 7.24 .150 / 3.81 .045 / 1.14 E F .725/18,42 I G J K L M A D C B 2x ØN FULL R H .835 / 21.21 .865 / 21.97

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 2/2

ERROR! REFERENCE SOURCE NOT FOUND. Specifications are subject to change without notice. VHB100-12 CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS hFE VCE = 5.0 V IC = 5.0 A 10 100 --- COB VCB = 12.5 V f = 1.0 MHz 390 pF PG ηηηηC VCC = 12.5 V P OUT = 100 W f = 175 MHz PIN = 25 W 6.0 dB IMPEDANCE DATA FREQ ZIN (Ω ) Z CL (Ω ) 175 MHz 1.05 – j0.9 0.5 – j1.0