VHB1-12T ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982 - 1200 • FAX (818) 765 - 3004 1/1

Sp ecifications are subject to change without notice. CHARACTERISTICS T C = 25 O C SYMBOL NONE TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CEO IC = 5.0 mA 20 V BV CER IC = 5.0 mA R BE = 10 Ω 40 V BV EBO IE = 100 µA 2.0 V ICEO V CE = 12 V 0.2 mA h FE V CE = 5.0 V I C = 100 mA 10 200 --- V CE(SAT) IC = 100 mA I B = 20 mA 0.5 Vdc C OB V CB = 12.5 V f = 1.0 MHz 4.0 pF P G ηηC V CE = 12.5 V P OUT = 1.0 W f = 175 MHz 10 dB NPN SILICON RF POWER TRANSISTOR VHB1 - 12T DESCRIPTION: The ASI VHB1 - 12T is Designed for FEATURES:

  • Omnigold ™ Metalization System MAXIMUM RATINGS IC 400 mA (MAX) V CBO 40 V V CEO 20 V V CER 40 V V EBO 2.0 V P DISS 3.5 W @ T C = 25 O C T J - 65 O C to +200 O C T STG - 65 O C to +200 O C θθJC 20 O C/W PACKAGE STYLE TO - 3 9 ORDER CODE: ASI10711 Ø A Ø D 45° CB F E G H MINIMUM inches / mm .029 / 0.740 .335 / 8.510 .200 / 5.080 .028 / 0.720 .305 / 7.750 .240 / 6.100 B C D E F G A MAXIMUM .034 / 0.860 .335 / 8.500 .260 / 6.600 .370 / 9.370 inches / mm .045 / 1.140 .500 / 12.700 H .016 / 0.407 .020 / 0.508 DIM