ISL9V5036P3_F085 FAIRCHILD | Alldatasheet
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Technical content
Features
Industry Standard D -Pak package SCIS Energy = 500mJ at T J = 25 o C Logic Level Gate Drive Package COLLECTOR (FLANGE) E G GATE COLLECTOR EMITTER R R Symbol D²-Pak JEDEC TO-263AB JEDEC TO-220AB E GC COLLECTOR (FLANGE) JEDEC TO-262AA E GC November 2009 Qualified to AEC Q101 RoHS Compliant EcoSPARK
©2009 Fairchild Semiconductor Corporation ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C4, November 2009 ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Package Marking and Ordering Information
Electrical Characteristics
T A = 25°C unless otherwise noted Off State Characteristics On State Characteristics Dynamic Characteristics Switching Characteristics Thermal Characteristics Device Marking Device Package Reel Size Tape Width Quantity V5036S ISL9V5036S3ST TO-263AB 330mm 24mm 800 V5036P ISL9V5036P3 TO-220AA Tube N/A 50 V5036S ISL9V5036S3 TO-262AA Tube N/A 50 V5036S ISL9V5036S3S TO-263AB Tube N/A 50 Symbol Parameter Test Conditions Min Typ Max Units BV CER Collector to Emitter Breakdown Voltage I C = 2mA, V GE = 0, R G = 1KΩ, See Fig. 15 T J = -40 to 150°C 330 360 390 V BV CES Collector to Emitter Breakdown Voltage I C = 10mA, V GE = 0, R G = 0, See Fig. 15 T J = -40 to 150°C 360 390 420 V BV ECS Emitter to Collector Breakdown Voltage I C = -75mA, V GE = 0V, T C = 25°C 30 - - V BV GES Gate to Emitter Breakdown Voltage I GES I CER Collector to Emitter Leakage Current V CER = 250V, R G = 1KΩ, See Fig. 11 T C = 25°C- - 2 5 µ A T C = 150°C- - 1 m A I ECS Emitter to Collector Leakage Current V EC = 24V, See Fig. 11 T C = 25°C- - 1 m A T C = 150°C- - 4 0 m A R Series Gate Resistance - 75 - Ω R Gate to Emitter Resistance 10K - 30K Ω V CE(SAT) Collector to Emitter Saturation Voltage I C = 10A, V GE = 4.0V T C = 25°C, See Fig. 4 - 1.17 1.60 V V CE(SAT) Collector to Emitter Saturation Voltage I C = 15A, V GE = 4.5V T C = 150°C - 1.50 1.80 V Q G(ON) Gate Charge I C = 10A, V CE = 12V, V GE = 5V, See Fig. 14 -3 2- n C V GE(TH) Gate to Emitter Threshold Voltage I C = 1.0mA, V CE = V GE, See Fig. 10 T C = 25°C1 . 3 - 2 . 2 V T C = 150°C 0 . 7 5- 1 . 8V V GEP Gate to Emitter Plateau Voltage I C = 10A, V CE = 12V - 3.0 - V t d(ON)R Current Turn-On Delay Time-Resistive V CE = 14V, R L = 1Ω, V GE = 5V, R G = 1KΩ T J = 25°C, See Fig. 12 -0 . 74µ s t rR Current Rise Time-Resistive - 2.1 7 µs t d(OFF)L Current Turn-Off Delay Time-Inductive V CE = 300V, L = 2mH, V GE = 5V, R G = 1KΩ T J = 25°C, See Fig. 12 - 10.8 15 µs t fL Current Fall Time-Inductive - 2.8 15 µs SCIS Self Clamped Inductive Switching T J R G = 1KΩ, V GE = 5V, See Fig. 1 & 2 - - 500 mJ R θJC Thermal Resistance Junction-Case TO-263, TO-220, TO-262 - - 0.6 °C/W
©2009 Fairchild Semiconductor Corporation ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C4, November 2009 ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 SPICE Thermal Model REV 1 May 2002 ISL9V5036S3S / ISL9V3536P3 / ISL9V5036S3 CTHERM1 th 6 4.0e2 CTHERM2 6 5 3.6e-3 CTHERM3 5 4 4.9e-2 CTHERM4 4 3 3.2e-1 CTHERM5 3 2 3.0e-1 CTHERM6 2 tl 1.6e-2 RTHERM1 th 6 1.0e-2 RTHERM2 6 5 1.4e-1 RTHERM3 5 4 1.0e-1 RTHERM4 4 3 9.0e-2 RTHERM5 3 2 9.4e-2 RTHERM6 2 tl 1.9e-2 SABER Thermal Model SABER thermal model ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 template thermal_model th tl thermal_c th, tl ctherm.ctherm1 th 6 = 4.0e2 ctherm.ctherm2 6 5 = 3.6e-3 ctherm.ctherm3 5 4 = 4.9e-2 ctherm.ctherm4 4 3 = 3.2e-1 ctherm.ctherm5 3 2 = 3.0e-1 ctherm.ctherm6 2 tl = 1.6e-2 rtherm.rtherm1 th 6 = 1.0e-2 rtherm.rtherm2 6 5 = 1.4e-1 rtherm.rtherm3 5 4 = 1.0e-1 rtherm.rtherm4 4 3 = 9.0e-2 rtherm.rtherm5 3 2 = 9.4e-2 rtherm.rtherm6 2 tl = 1.9e-2 RTHERM4 RTHERM6 RTHERM5 RTHERM3 RTHERM2 RTHERM1 CTHERM4 CTHERM6 CTHERM5 CTHERM3 CTHERM2 CTHERM1 tl th JUNCTION CASE
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