MMBD1201_01 FAIRCHILD | Alldatasheet

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MMBD1201 / 1203 / 1204 / 1205 MMBD1200 series, Rev. C MMBD1201 / 1203 / 1204 / 1205 Small Signal Diodes Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. MARKING MMBD1201 24 MMBD1203 26 MMBD1204 27 MMBD1205 28  2001 Fairchild Semiconductor Corporation Thermal Characteristics Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 100 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond 1.0 2.0 A A Tstg Storage Temperature Range -55 to +150 °C TJ Operating Junction Temperature 150 °C Symbol Parameter Value Units PD Power Dissipation 350 mW RθJA Thermal Resistance, Junction to Ambient 357 °C/W 1 2 SOT-23 Symbol Parameter Test Conditions Min Max Units VR Breakdown Voltage IR = 100 µA 100 V VF Forward Voltage I F = 1.0 mA IF = 10 mA IF = 100 mA IF = 200 mA IF = 300 mA 550 660 820 0.87 600 740 920 1.0 1.1 mV mV mV V V IR Reverse Current V R = 20 V VR = 50 V VR = 50 V, TA = 150°C 5.0 nA nA µA CT Total Capacitance VR = 0, f = 1.0 MHz 2.0 pF trr Reverse Recovery Time I F = IR = 10 mA, IRR = 1.0 mA, RL = 100 Ω 4.0 ns Connection Diagrams 1201 1203 1204 1205 2 1 2NC

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