MMBD4148_V01 FAIRCHILD | Alldatasheet
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Technical content
MMBD4148 / MMBD4148SE / MMBD4148CC / MMBD4148CA — Small Signal Diode © 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBD4148 / MMBD4148SE / MMBD4148CC / MMBD4148CA Rev. 1.1.0 November 2014 MMBD4148 / MMBD4148SE / MMBD4148CC / MMBD4148CA Small Signal Diode
Ordering Information
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T A = 25°C unless otherwise noted. Part Number Top Mark Package Packing Method MMBD4148 5H SOT-23 3L Tape and Reel MMBD4148_D87Z 5H SOT-23 3L Tape and Reel MMBD4148SE D4 SOT-23 3L Tape and Reel MMBD4148CC D5 SOT-23 3L Tape and Reel MMBD4148CA D6 SOT-23 3L Tape and Reel Symbol Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 100 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-Repetitive Peak Forward Surge Current Pulse Width = 1.0 second 1.0 A Pulse Width = 1.0 microsecond 2.0 TSTG Storage Temperature Range -55 to +150 °C TJ Operating Junction Temperature 150 °C Connection Diagram 1 2 SOT-23 1 2 1 2 4148 4148SE 4148CA4148CC 2NC
MMBD4148 / MMBD4148SE / MMBD4148CC / MMBD4148CA — Small Signal Diode © 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBD4148 / MMBD4148SE / MMBD4148CC / MMBD4148CA Rev. 1.1.0 2 Thermal Characteristics Values are at TA = 25°C unless otherwise noted.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit PD Power Dissipation 350 mW RθJA Thermal Resistance, Junction-to-Ambient 357 °C/W Symbol Parameter Conditions Min. Max. Unit VR Breakdown Voltage IR = 5.0 μA7 5 V IR = 100 μA1 0 0 VF Forward Voltage I F = 10 mA 1.0 V IR Reverse Leakage Current VR = 20 V 25 nA VR = 20 V, TA = 150°C 50 μA VR = 75 V 5.0 μA CT Total Capacitance V R = 0 V, f = 1.0 MHz 4.0 pF trr Reverse Recovery Time IF = 10 mA, VR = 6.0 V, IRR = 1.0 mA, RL = 100 Ω 4.0 ns
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