UMY1N

UMY1N JIANGSU | Alldatasheet

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Transistors UMY1N

FEATURES

z Includes a 2SA1037AK and a 2SC2412K transistor in a package z PNP and NPN transistors have common emitters z Mounting cost and area be cut in half MARKING: Y1 Tr1 Absolute maximum ratings (T a =25℃) Symbol Para meter Limits Units V CBO Coll ector-Base Voltage -60 V V CEO Coll ector-Emitter Voltage -50 V V EBO Emitter-Base Voltage -6 V I C Collector Current -Continuous -150 mA P C Collector Dissipation 150 mW T j Junctio n temperature 150 ℃ T STG Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-50μA,I E =0 -60 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA,I B =0 -50 V Emitter-base breakdown voltage V (BR)EBO I E =-50μA,I C =0 -6 V Collector cut-off current I CBO V CB =-60V,I E =0 -0.1 μA Emitter cut-off current I EBO V EB =-6V,I C =0 -0.1 μA DC current gain h FE V CE =-6V,I C =-1mA 120 560 Collector-emitter saturation voltage V CE(sat) I C =-50mA,I B =-5mA -0.5 V Transition frequency f T V CE =-12V,I C =-2mA, f=100MHz 140 MHz Output capacitance C ob V CB =-12V,I E =0, f=1MHz 5 pF JC(T SOT-353 Dual Transistors (PNP+NPN) www.cj-elec.com 1 A,Jun,2014www.cj-elec.com ',0DU,201

Tr2 Absolute maximum ratings (T a =25℃) Symbol Parameter Limits Units V CBO Collector-Base Voltage 60 V V CEO Collector-Emitter Voltage 50 V V EBO Emitter-Base Voltage 7 V I C Collector Current -Continuous 150 mA P C Collector Dissipation 150 mW T j Junction temperature 150 ℃ T STG Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =50μA,I E =0 60 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA,I B =0 50 V Emitter-base breakdown voltage V (BR)EBO I E =50μA,I C =0 7 V Collector cut-off current I CBO V CB =60V,I E =0 0.1 μA Emitter cut-off current I EBO V EB =7V,I C =0 0.1 μA DC current gain h FE V CE =6V,I C =1mA 120 560 Collector-emitter saturation voltage V CE(sat) I C =50mA,I B =5mA 0.4 V Transition frequency f T V CE =12V,I C =2mA, f=100MHz 180 MHz Output capacitance C ob V CB =12V,I E =0, f=1MHz 3.5 pF www.cj-elec.com 2 A,Jun,2014www.cj-elec.com D,Mar,2016

A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.150 0.350 0.006 0.014 c 0.100 0.150 0.004 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.400 0.085 0.094 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP SOT-353 Suggested Pad Layout www.cj-elec.com D,Mar,2016

www.cj-elec.com D,Mar,2016