UMX3N JIANGSU | Alldatasheet

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors UMX3N

FEATURES

z Two 2SC2412K chips in a package MAKING: X3 MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base V oltage 60 V V CEO Collector-Emitter Voltage 50 V V EBO Emitter-Base Voltage 7 V I C Collector Current -Continuous 150 mA P C Collector Power Dissipation 150 mW T J Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M in Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =50μA,I E =0 60 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA,I B =0 50 V Emitter-base breakdown voltage V (BR)EBO I E =50μA,I C =0 7 V Collector cut-off current I CBO V CB =60V,I E =0 0.1 μA Emitter cut-off current I EBO V EB =7V,I C =0 0.1 μA DC current gain h FE V CE =6V,I C =1mA 120 560 Collector-emitter saturation voltage V CE(sat) I C =50mA,I B =5mA 0.4 V Transition frequency f T V CE =12V,I C =-2mA,f=100MHz 180 MHz Collector output capacitance C ob V CB =12V,I E =0,f=1MHz 2.0 3.5 pF JC(T SOT-363 DUAL TRANSISTOR (NPN+NPN) www.cj-elec.com 1 E,Mar,2016www.cj-elec.com

0.1 1 10 100 100 1000 0 25 50 75 100 125 150 100 150 200 0.1 1 10 100 100 0.1 1 10 100 100 1000 0.1 1 10 02468 1 0 100 I C f T COMMON EMITTER V CE =12V T a =25 COLLECTOR CURRENT I C (mA) TRANSITION FREQUENCY f T (MHz) 500 0.5 β=10 I C V BEsat BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) COLLECTOR CURREMT I C (mA) T a =100 T a =25 P C —— T a AMBIENT TEMPERATURE T a ( ) COLLECTOR POWER DISSIPATION P C (mW) T a =100 T a =25 β=10 I C V CEsat COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURREMT I C (mA) 300 150 I C h FE T a =100 T a =25 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) COMMON EMITTER V CE = 6V f=1MHz I E =0/I C T a =25 V CB EB C ob ib C ob C ib REVERSE VOLTAGE V (V) CAPACITANCE C (pF) COMMON EMITTER T a =25 20uA 18uA 16uA 14uA 12uA 10uA 8uA 6uA COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) V CE —— I C I B =2uA 4uA 2000 150150 COLLECTOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (V) I C —— V BE T a =25 T a =100 COMMON EMITTER V CE =6V 150 Typical Characteristics www.cj-elec.com 2www.cj-elec.com E,Mar,2016

SOT-363 Suggested Pad Layout www.cj-elec.com 3www.cj-elec.com Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.150 0.350 0.006 0.014 c 0.100 0.150 0.004 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.400 0.085 0.094 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP E,Mar,2016

www.cj-elec.com 4www.cj-elec.com E,Mar,2016