UMX18N JIANGSU | Alldatasheet
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors UMX18N
FEATURES
z T wo 2SC5585 chips in a package z Mounting possible with SOT-36 3 automatic mounting machines z Transistor elements are independ ent, eliminating interference z Mounting cost and area be cut in half Marking: X18 Absolute maximum ratings (Ta=25℃) Symbol Parameter Value Units V CBO Collector-Base Voltage 15 V V CEO Collector-Emitter Voltage 12 V V EBO Emitter-Base Voltage 6 V I C Collector Current 500 mA P C Collector Power Dissipation 150 mW T J Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =10μA, I E =0 15 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA, I B =0 12 V Emitter-base breakdown voltage V (BR)EBO I E =10μA, I C =0 6 V Collector cut-off current I CBO V CB =15V, I E =0 0.1 μA Emitter cut-off current I EBO V EB =6V, I C =0 0.1 μA DC current gain h FE V CE =2V, I C =10mA 270 680 Collector-emitter saturation voltage V CE(sat) I C =200mA, I B =10mA 0.25 V Transition frequency f T V CE =2V, I E =-10mA, f=100MHz 320 MHz Collector output capacitance C ob V CB =10V, I E =0, f=1MHz 7.5 pF JC(T SOT-363 DUAL TRANSISTOR (NPN+NPN) www.cj-elec.com 1www.cj-elec.com D,Mar,2016
SOT-363 Suggested Pad Layout www.cj-elec.com 2www.cj-elec.com D,Mar,2016 Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.150 0.350 0.006 0.014 c 0.100 0.150 0.004 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.400 0.085 0.094 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP
www.cj-elec.com 3www.cj-elec.com D,Mar,2016