UMT1N JIANGSU | Alldatasheet

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors UMT1N

FEATURES

z Two 2SA1037AK chips in a package z Mounting possible with SOT-36 3 automatic mounting machines. z Transistor elements are independ ent, eliminating interference. z Mounting cost and area be cut in half. Marking: T1 Absolute maximum ratings (Ta=25℃) Symbol Parameter L imits Units V CBO Collector-Base Voltage -60 V V CEO Collector-Emitter Voltage -50 V V EBO Emitter-Base Voltage -6 V I C Collector Current -Continuous -150 mA P C Collector Dissipation 150 mW T j Junction temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions M in T yp Max Unit Collector-base breakdown voltage V (BR)CBO I C =-50μA,I E =0 -60 V Collector-emitter breakdown Voltage V (BR)CEO I C =-1mA,I B =0 -50 V Emitter-base breakdown voltage V (BR)EBO I E =-50μA,I C =0 -6 V Collector cut-off current I CBO V CB =-60V,I E =0 -0.1 uA Emitter cut-off current I EBO V EB =-6V,I C =0 -0.1 uA DC current gain h FE V CE =-6V,I C =-1mA 120 560 Collector-emitter saturation voltage V CE(sat) I C =-50mA,I B =-5mA -0.5 V Transition frequency f T V CE =-12V,I E =2mA, f=100MHz 140 MHz Output capacitance Cob V CB =-12V,I E =0, f=1MHz 5 pF B,Nov,2011 JC(T SOT-363 DUAL TRANSISTOR (PNP+PNP) www.cj-elec.com 1 E,Mar,2016www.cj-elec.com

-0.1 -10 -100 -0.1 -1 -10 0.1 100 -1 -10 100 1000 0 25 50 75 100 125 150 100 150 200 -0.1 -1 -10 -100 -400 -600 -800 -1000 -0.1 -1 -10 -100 -10 -100 -1000 -0.1 -1 -10 -100 100 1000 I C —— V BE COLLECTOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (V) COMMON EMITTER V CE =-6V T a =100 T a =25 -150 C ib C ob f=1MHz I E =0/I C T a =25 V CB / V EB C ob / C ib OUTPUT CAPACITANCE C ob / C ib (pF) COLLECTOR-BASE VOLTAGE V CB / V EB (V) -0.5 I C f T TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) -80 V CE = -12V T a =25 P C —— T a COLLECTOR POWER DISSIPATION P C (mW) AMBIENT TEMPERATURE T a ( ) -150 β=10 T a =25 T a =100 BASE-EMITTER SATURATION VOLTAGE V BE (sat) (mV) COLLECTOR CURRENT I C (mA) I C V BEsat -150 I C V CEsat COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) β=10 T a =25 T a =100 COMMON EMITTER T a =25 -150 T a =100 T a =25 I C COLLECTOR CURRENT I C (mA) DC CURRENT GAIN h FE COMMON EMITTER V CE =-6V h FE -20uA -18uA -16uA -14uA -12uA -10uA -8uA -6uA -20 -4uA I B =-2uA Static Characteristic COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) Typical Characteristics www.cj-elec.com 2www.cj-elec.com E,Mar,2016

SOT-363 Suggested Pad Layout www.cj-elec.com 3www.cj-elec.com Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.150 0.350 0.006 0.014 c 0.100 0.150 0.004 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.400 0.085 0.094 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP E,Mar,2016

www.cj-elec.com 4www.cj-elec.com E,Mar,2016