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Technical content
General purpose transistors (Isolated transistor and diode)
FEATURES
2SC5585 and RB521S-30 chips in a package
APPLICATIONS
1) Tr : Low VCE(sat) Di : Low VF 2) Small package STRUCTURE Silicon epitaxial planar transistor Schottky barrier diode Marking: L6 Equivalent circuit Absolute maximum ratings (Ta=25℃) DI Parameter Symbol Limits Unit DC reverse voltage V R 30 V Mean rectifying current I O 200 mA Peak forward surge current I FSM 1 A Junction temperature Tj 125 ℃ Storage temperature T stg -55~+150 ℃ TR Symbol Parameter L imits Unit V CBO Collector-Base Voltage 15 V V CEO Collector-Emitter Voltage 12 V V EBO Emitter-Base Voltage 6 V I C Collector Current -Continuous 500 mA P C Collector Dissipation 150 mW T j Junction temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ www.htsemi.comsemiconductor JinYu Date:2011/ 05
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) DI Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V F
0.5 V I
F =200mA Reverse current I R 30 μA V R =10V TR Parameter Symbol Test conditions M in Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =10μA,I E =0 15 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA,I B =0 12 V Emitter-base breakdown voltage V (BR)EBO I E =10μA,I C =0 6 V Collector cut-off current I CBO V CB =15V,I E =0 0.1 uA Emitter cut-off current I EBO V EB =6V,I C =0 0.1 uA DC current gain h FE V CE =2V,I C =10mA 270 680 Collector-emitter saturation voltage V CE(sat) I C =200mA,I B =10mA 0.25 V Transition frequency f T V CE =2V,I E =-10mA, f=100MHz 320 MHz Collector output capacitance Cob V CB =10V,I E =0mA, f=1MHz 7.5 pF www.htsemi.comsemiconductor JinYu Date:2011/ 05 UML6N