UML2N HTSEMI | Alldatasheet
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z The 2SC2412K and a diodes are housed independently In a package MARKING：L2 TR MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage 60 V V CEO Collector-Emitter Voltage 50 V V EBO Emitter-Base Voltage 6 V I C Collector Current -Continuous 150 mA P C Collector Power Dissipation 150 mW T J Junction Temperature 150 ℃ T stg Storage Temperature -55 to150 ℃ DIO Maximum Ratings and Electrical Characteristics, Single Diode @T a =25℃ Parameter Symbol Limits Unit DC reverse voltage V R 80 V Peak Reverse Voltage V RM 80 V Forward Continuous Current I FM 300 mA Average Rectified Output Current I O 100 mA Surge current I SURGE 4 A Junction temperature T j 150 Storage temperature T STG -55~+150 UML2N www.htsemi.comsemiconductor JinYu Date:2011/ 05
TR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M in Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =50μA,I E =0 60 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA,I B =0 50 V Emitter-base breakdown voltage V (BR)EBO I E =50μA,I C =0 6 V Collector cut-off current I CBO V CB =60V,I E =0 0.1 μA Emitter cut-off current I EBO V EB =5V,I C =0 0.1 μA DC current gain h FE V CE =6V,I C =1mA 120 560 Collector-emitter saturation voltage V CE(sat) I C =50mA,I B =5mA 0.4 V Transition frequency f T V CE =12V,I C =2mA,f=100MHz 180 MHz Collector output capacitance C ob V CB =12V,I E =0,f=1MHz 3.5 pF a =25℃ Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V F
1.2 V I
F =100mA Reverse current I R 0.1 μA V R =70V Capacitance between terminals C T 3.5 pF V R =6V,f=1MHz Reverse Recovery Time t rr 4 ns V R =6V, I F =5mA,R L =50Ω UML2N www.htsemi.comsemiconductor JinYu Date:2011/ 05