UMH7N JIANGSU | Alldatasheet

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD UMH7N

FEATURES

z Two DTC143T chips in a package z Mounting possible with SOT-36 3 automatic mounting machines z Transistor elements are independ ent, eliminating interference z Mounting cost and area be cut in half Marking: H7 Absolute maximum ratings(Ta=25℃) Parameter Symbol Value Unit Collector-base voltage V (BR)CBO 50 V Collector-emitter voltage V (BR)CEO 50 V Emitter-base voltage V (BR)EBO 5 V Collector current I C 100 mA Collector Power dissipation P C 150 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ Electrical characteristics (Ta=25℃) Parameter Symb Min. Typ Max. Unit Conditions Collector-base breakdown voltage V (BR)CBO

50 V I

C =50μA Collector-emitter breakdown voltage V (BR)CEO C =1mA Emitter-base breakdown voltage V (BR)EBO

5 V I

E =50μA Collector cut-off current I CBO 0.5 μA V CB =50V Emitter cut-off current I EBO 0.5 μA V EB =4V Collector-emitter saturation voltage V CE(sat)

0.3 V I

C =5mA,I B =0.25mA DC current transfer ratio h FE 100 600 V CE =5V,I C =1mA Input resistance R 3.29 4.7 6.11 K Ω Transition frequency f T

250 MHz V

=10V ,I E =-5mA,f=100MHz JC(T SOT-363 www.cj-elec.com 1www.cj-elec.com D,Mar,2016 Dual Digital Transistors (NPN+NPN) Digital Transistors (Built-in Resistors)

0.1 1 10 0.1 100 0.1 1 10 0.1 100 0.1 1 10 100 100 1000 0123456 11 0 1 0 0 0.1 100 1 10 100 0.01 0.1 0 25 50 75 100 125 150 100 150 200 V CE =5V T a =100 T a =25 COLLCETOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (V) I C I C C ob C ib V CB / V EB C ob / C ib CAPACITANCE C (pF) REVERSE VOLTAGE V (V) f=1MHz I E =0/ I C T a =25 o C DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) T a =100 o C T a =25 o C V BE h FE V CE =5V COMMON EMITTER T a =25 50uA 45uA 40uA 35uA 30uA 25uA 20uA 15uA 10uA I B =5uA COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) Static Characteristic T a =25 T a =100 β=20 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) COLLECTOR CURRENT I C (mA) I C V BEsat COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) COLLECTOR CURRENT I C (mA) T a =100 T a =25 β=20 I C V CEsat POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE T a ( ) P D —— T a Typical Characteristics www.cj-elec.com 2www.cj-elec.com D,Mar,2016

SOT-363 Suggested Pad Layout www.cj-elec.com 3www.cj-elec.com D,Mar,2016 Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.150 0.350 0.006 0.014 c 0.100 0.150 0.004 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.400 0.085 0.094 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP

www.cj-elec.com 4www.cj-elec.com D,Mar,2016