UMH4N

UMH4N JIANGSU | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD UMH4N

FEATURES

z Two DTC114T chips in a package z Mounting possible with SOT-36 3 automatic mounting machines z Transistor elements are independ ent, eliminating interference z Mounting cost and area be cut in half Marking: H4 Absolute maximum ratings (Ta=25℃) Symbol Parameter L imits Units V CBO Collector-Base Voltage 50 V V CEO Collector-Emitter Voltage 50 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 100 mA P C Collector Dissipation 150 mW T j Junction temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions M in T yp Max Unit Collector-base breakdown voltage V (BR)CBO I C =50μA,I E =0 50 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA,I B =0 50 V Emitter-base breakdown voltage V (BR)EBO I E =50μA,I C =0 5 V Collector cut-off current I CBO V CB =50V,I E =0 0.5 uA Emitter cut-off current I EBO V EB =4V,I C =0 0.5 uA DC current gain h FE V CE =5V,I C =1mA 100 300 600 Collector-emitter saturation voltage V CE(sat) I C =10mA,I B =1mA 0.3 V Transition frequency f T V CE =10V,I E =-5mA, f=100MHz 250 MHz Imput resistor R 7 10 13 k Ω JC(T SOT-363 Dual Digital Transistors (NPN+NPN) www.cj-elec.com 1www.cj-elec.com D,Mar,2016 Digital Transistors (Built-in Resistors)

0.1 1 10 100 100 1000 0.1 1 10 0.1 100 0.1 1 10 100 0.1 0 25 50 75 100 125 150 100 150 200 0.1 1 10 100 100 01234567 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.1 1 10 T a =100 T a =25 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) COMMON EMITTER VCE= 5V BASE-EMMITER VOLTAGE V BE (V) COLLECTOR CURRENT I C (mA) Ta=25 T a =100 COMMON EMITTER VCE=5V I C —— V BE β=10 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) COLLECTOR CURREMT I C (mA) I C V BEsat T a =100 T a =25 AMBIENT TEMPERATURE T a ( ) POWER DISSIPATION P D (mW) P D —— T a T a =100 T a =25 β=10 I C V CEsat COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) 500 I C h FE COMMON EMITTER T a =25 Static Characteristic COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) 10uA 9uA 8uA 7uA 6uA 5uA 4uA 3uA 2uA I B =1uA C ib C ob CAPACITANCE C T (pF) REVERSE VOLTAGE V (V) f=1MHz I C =0/I E T a =25 V CB EB C ob ib Typical Characteristics www.cj-elec.com 2www.cj-elec.com D,Mar,2016

SOT-363 Suggested Pad Layout www.cj-elec.com 3www.cj-elec.com D,Mar,2016 Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.150 0.350 0.006 0.014 c 0.100 0.150 0.004 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.400 0.085 0.094 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP

www.cj-elec.com 4www.cj-elec.com D,Mar,2016